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74V1G07C PDF预览

74V1G07C

更新时间: 2024-11-03 22:16:47
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 栅极触发器逻辑集成电路光电二极管
页数 文件大小 规格书
7页 51K
描述
SINGLE BUFFER OPEN DRAIN

74V1G07C 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Obsolete零件包装代码:SOIC
包装说明:SC-70, 5 PIN针数:5
Reach Compliance Code:not_compliantHTS代码:8542.39.00.01
风险等级:5.91系列:74V
JESD-30 代码:R-PDSO-G5JESD-609代码:e0
长度:2 mm负载电容(CL):50 pF
逻辑集成电路类型:BUFFER最大I(ol):0.004 A
功能数量:1输入次数:1
端子数量:5最高工作温度:125 °C
最低工作温度:-55 °C输出特性:OPEN-DRAIN
封装主体材料:PLASTIC/EPOXY封装代码:TSSOP
封装等效代码:TSSOP6,.08封装形状:RECTANGULAR
封装形式:SMALL OUTLINE, THIN PROFILE, SHRINK PITCH峰值回流温度(摄氏度):NOT SPECIFIED
电源:2/5.5 VProp。Delay @ Nom-Sup:15 ns
传播延迟(tpd):12.5 ns认证状态:Not Qualified
施密特触发器:NO座面最大高度:1.1 mm
子类别:Gates最大供电电压 (Vsup):5.5 V
最小供电电压 (Vsup):2 V标称供电电压 (Vsup):3.3 V
表面贴装:YES技术:CMOS
温度等级:MILITARY端子面层:Tin/Lead (Sn/Pb)
端子形式:GULL WING端子节距:0.65 mm
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
宽度:1.25 mmBase Number Matches:1

74V1G07C 数据手册

 浏览型号74V1G07C的Datasheet PDF文件第2页浏览型号74V1G07C的Datasheet PDF文件第3页浏览型号74V1G07C的Datasheet PDF文件第4页浏览型号74V1G07C的Datasheet PDF文件第5页浏览型号74V1G07C的Datasheet PDF文件第6页浏览型号74V1G07C的Datasheet PDF文件第7页 
74V1G07  
SINGLE BUFFER (OPEN DRAIN)  
PRELIMINARY DATA  
HIGH SPEED:tPD =6.1ns (TYP.) atVCC = 5V  
LOW POWER DISSIPATION:  
CC =1 µA (MAX.) at TA =25 oC  
HIGH NOISEIMMUNITY:  
NIH = VNIL =28% VCC (MIN.)  
I
V
S
C
POWERDOWN PROTECTIONON INPUT  
OPERATING VOLTAGERANGE:  
(SOT23-5L)  
(SC-70)  
ORDER CODE:  
VCC (OPR)= 2V to 5.5V  
74V1G07S  
74V1G07C  
IMPROVED LATCH-UP IMMUNITY  
Power down protection is provided on input and 0  
to 7V can be accepted on input with no regard to  
the supply voltage. This device can be used to  
interface5V to 3V.  
DESCRIPTION  
The 74V1G07 is an advanced high-speed CMOS  
SINGLE BUFFER (OPEN DRAIN) fabricated with  
sub-micron silicon gate and double-layer metal  
wiring C2MOS technology.  
The internal circuit is composed of 2 stages  
including buffer output, which provide high noise  
immunity and stable output.  
PIN CONNECTION AND IEC LOGIC SYMBOLS  
1/7  
October 1999  

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