Datasheet > 3N164-SOT-143-4L

3N164-SOT-143-4L

更新时间： 2024-11-07 06:52:43

品牌	Logo	应用领域
凌特 - Linear		/
页数	文件大小	规格书
2页	134K
描述
Transistor,

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数据手册

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3N164-SOT-143-4L 数据手册

3N163, 3N164

P-CHANNEL ENHANCEMENT MODE

MOSFET

FEATURES

VERY HIGH INPUT IMPEDANCE

HIGH GATE BREAKDOWN

ULTRA LOW LEAKAGE

FAST SWITCHING

LOW CAPACITANCE

ABSOLUTE MAXIMUM RATINGS

@ 25°C (unless otherwise stated)

Drain-Source or Drain-Gate Voltage

3N163

-40V

3N164

-30V

TO-72

TOP VIEW

SOT-143

Drain Current

50mA

Storage Temperature

-55ºC to +150ºC

375mW²

350mW³

Power Dissipation TO-72 case

Power Dissipation SOT-143 case

ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted)

SYMBOL

CHARACTERISTIC

3N163

3N164

UNITS

CONDITIONS

MIN MAX MIN MAX

I_GSS

Gate Leakage Current

-10

V_GS=-40V, V_DS=0 (3N163), V_SB=0V

V_GS=-30V, V_DS=0 (3N164), V_SB=0V

I_D=-10µA V_GS=0, V_BS=0

T_A=+125ºC

-25

BV_DSS

BV_SDS

V_GS(th)

V_GS

Drain-Source Breakdown Voltage

Source-Drain Breakdown Voltage

Threshold Voltage

-40

-30

I_S=-10µA

V_DS=V_GS

V_GD=0, V_BD=0

-2.0

-3.0

-5.0 -2.0 -5.0

-6.5 -3.0 -6.5

I_D=-10µA, V_SB=0V

Gate Source Voltage (on)

V_DS=-15V I_D=-0.5mA, V_SB=0V

V_DS=-15V V_GS=0, V_SB=0V

V_SD=-15V V_GS=0, V_DB=0V

I_DSS

Zero Gate Voltage, Drain Current (off)

Zero Gate Voltage, Source Current

-200

-400

250

-400

-800

I_SDS

R_DS(on)

I_D(on)

g_fs

Drain-Source on Resistance

On Drain Current

300 ohms V_GS=-20V I_D=-100µA, V_SB=0V

-5.0

2.0

-30 -3.0 -30

µS

V_DS=-15V V_GS=-10V, V_SB=0V

V_DS=-15V I_D=-10mA f=1kHz

Forward Transconductance

Output Admittance

4.0

250

3.5

0.7

3.0

1.0

4.0

250

3.5

0.7

3.0

g_og

C_iss

Input Capacitance-Output Shorted

Reverse Transfer Capacitance

Output Capacitance Input Shorted

_DS=-15V I_D=-10mA ¹f=1MHz

C_rss

C_oss

Linear Integrated Systems

• 4042 Clipper Court • Fremont, CA 94538 • Tel: 510 490-9160 • Fax: 510 353-0261

7/26/2012 Rev#A6 ECN# 3N163 3N164

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