Datasheet > 3N166-TO-99-6L-ROHS

3N166-TO-99-6L-ROHS

更新时间： 2023-07-15 00:00:00

品牌	Logo	应用领域
凌特 - Linear		/
页数	文件大小	规格书
2页	293K
描述
Transistor,

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3N166-TO-99-6L-ROHS 数据手册

浏览型号3N166-TO-99-6L-ROHS的Datasheet PDF文件第2页

LS/3N165, LS/3N166

MONOLITHIC DUAL P-CHANNEL

ENHANCEMENT MODE MOSFET

FEATURES

VERY HIGH INPUT IMPEDANCE

HIGH GATE BREAKDOWN

ULTRA LOW LEAKAGE

LOW CAPACITANCE

LS3N165, LS3N166

3N165, 3N166

ABSOLUTE MAXIMUM RATINGS (NOTE 1)

(T_A=25°C unless otherwise noted)

Drain-Source or Drain-Gate Voltage (NOTE 2)

3N165

40 V

3N166

30 V

Gate-Gate Voltage

±80 V

Drain Current (NOTE 2)

Storage Temperature

50 mA

TO-99

TOP VIEW

SOIC

TOP VIEW

-55ºC to +150ºC

+300ºC

Operating Temperature

Lead Temperature (Soldering, 10 sec.)

Power Dissipation (One Side)

Total Derating above 25ºC

300 mW

4.2 mW/ºC

ELECTRICAL CHARACTERISTICS (T_A=25°C and V_BS=0 unless otherwise noted)

3N165 &

3N166

LS3N165 &

LS3N166

SYMBOL

I_GSSR

CHARACTERISTIC

Gate Reverse Leakage Current

Gate Forward Leakage Current

MIN MAX MIN MAX UNITS

CONDITIONS

-10

-25

-200

-400

-30

-5

100

-100

V_GS=40V

I_GSSF

V_GS=-40V

T_A=+125ºC

I_DSS

Drain to Source Leakage Current

Source to Drain Leakage Current

On Drain Current

-200

-400

-30

-5

V_DS=-20 V, V_GS=V_BS=0V

I_SDS

-5

-2

V_SD=-20 V, V_GD=V_DB=0V

I_D(on)

V_GS(th)

r_DS(on)

g_fs

-5

-2

V_DS=-15V V_GS=-10 V V_SB=0V

Gate Source Threshold Voltage

Drain Source ON Resistance

Forward Transconductance

Output Admittance

V_DS=-15V I_D=-10µA

V_DS=V_GSI_D=-10µA

V_SB=0V

-5

300

300 ohms V_GS=-20V I_D=-100µA V_SB=0V

1500 3000 1500 3000 µS

V_DS=-15V I_D=-10mA

V_SB=0V

f=1kHz

g_os

300

3.0

0.7

3.0

300

3.0

1.0

3.0

µS

C_lss

Input Capacitance

C_rss

Reverse Transfer Capacitance

Output Capacitance

V_DS=-15V I_D=-10mA

(NOTE 3) V_SB=0V

V_DS=-15V I_D=-10mA

(NOTE 3) V_SB=0V

f=1MHz

C_oss

R_E(Y_ls)

1200

f=100MHz

Common Source Forward

Transconductance

Linear Integrated Systems

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Doc 201138 06/26/2013 Rev#A6 ECN# 3N165 3N166

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