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3N170-TO-72-4L-ROHS PDF预览

3N170-TO-72-4L-ROHS

更新时间: 2024-02-06 13:23:16
品牌 Logo 应用领域
凌特 - Linear /
页数 文件大小 规格书
2页 249K
描述
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,

3N170-TO-72-4L-ROHS 技术参数

是否Rohs认证: 符合生命周期:Contact Manufacturer
包装说明:,Reach Compliance Code:compliant
风险等级:5.76配置:Single
FET 技术:METAL-OXIDE SEMICONDUCTOR工作模式:ENHANCEMENT MODE
最高工作温度:135 °C极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):0.3 W子类别:FET General Purpose Power
表面贴装:NOBase Number Matches:1

3N170-TO-72-4L-ROHS 数据手册

 浏览型号3N170-TO-72-4L-ROHS的Datasheet PDF文件第2页 
3N170, 3N171  
N-CHANNEL MOSFET  
ENHANCEMENT MODE  
FEATURES  
Direct Replacement for INTERSIL 3N170 & 3N171  
LOW DRAIN TO SOURCE RESISTANCE  
rds(on) ≤ 200Ω  
FAST SWITCHING  
td(on) ≤ 3.0ns  
3N170, 171  
3N170, 171  
ABSOLUTE MAXIMUM RATINGS1  
@ 25 °C (unless otherwise stated)  
Maximum Temperatures  
Storage Temperature  
SOT-143  
TOP VIEW  
-65 to +150 °C  
-55 to +135 °C  
Operating Junction Temperature  
Maximum Power Dissipation  
Continuous Power Dissipation  
Maximum Current  
300mW  
30mA  
Drain to Source  
Maximum Voltages  
Drain to Gate  
±35V  
25V  
Drain to Source  
Gate to Source  
±35V  
ELECTRICAL CHARACTERISTICS @ 25 °C (unless otherwise stated) (VSB = 0V unless otherwise stated)  
SYMBOL  
BVDSS  
CHARACTERISTIC  
MIN TYP MAX UNITS CONDITIONS  
Drain to Source Breakdown Voltage  
Drain to Source "On" Voltage  
25  
ID = 10µA, VGS = 0V  
VDS(on)  
2.0  
2.0  
3.0  
10  
ID = 10mA, VGS = 10V  
V
3N170  
3N171  
1.0  
1.5  
Gate to Source  
Threshold Voltage  
VGS(th)  
VDS = 10V, ID = 10µA  
IGSS  
IDSS  
ID(on)  
gfs  
Gate Leakage Current  
Drain Leakage Current "Off"  
Drain Current "On"  
pA  
nA  
mA  
µS  
Ω
VGS = -35V, VDS = 0V  
10  
VDS = 10V, VGS = 0V  
10  
VGS = 10V, VDS = 10V  
Forward Transconductance  
1000  
VDS = 10V, ID = 2.0mA, f = 1.0kHz  
VGS = 10V, ID = 100µA, f = 1.0kHz  
VDS = 0V, VGS = 0V, f = 1.0MHz  
VDS = 10V, VGS = 0V, f = 1.0MHz  
VDB = 10V, f = 1.0MHz  
rds(on)  
Crss  
Ciss  
Cdb  
Drain to Source "On" Resistance  
Reverse Transfer Capacitance  
Input Capacitance  
200  
1.3  
5.0  
5.0  
pF  
Drain to Body Capacitance  
Linear Integrated Systems  
4042 Clipper Court • Fremont, CA 94538 • Tel: 510 490-9160 • Fax: 510 353-0261  
Doc 201139 07/12/13 Rev#A15 ECN# 3N170_3N171  

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