3N170, 3N171
N-CHANNEL MOSFET
ENHANCEMENT MODE
FEATURES
Direct Replacement for INTERSIL 3N170 & 3N171
LOW DRAIN TO SOURCE RESISTANCE
rds(on) ≤ 200Ω
FAST SWITCHING
td(on) ≤ 3.0ns
3N170, 171
3N170, 171
ABSOLUTE MAXIMUM RATINGS1
@ 25 °C (unless otherwise stated)
Maximum Temperatures
Storage Temperature
SOT-143
TOP VIEW
-65 to +150 °C
-55 to +135 °C
Operating Junction Temperature
Maximum Power Dissipation
Continuous Power Dissipation
Maximum Current
300mW
30mA
Drain to Source
Maximum Voltages
Drain to Gate
±35V
25V
Drain to Source
Gate to Source
±35V
ELECTRICAL CHARACTERISTICS @ 25 °C (unless otherwise stated) (VSB = 0V unless otherwise stated)
SYMBOL
BVDSS
CHARACTERISTIC
MIN TYP MAX UNITS CONDITIONS
Drain to Source Breakdown Voltage
Drain to Source "On" Voltage
25
ID = 10µA, VGS = 0V
VDS(on)
2.0
2.0
3.0
10
ID = 10mA, VGS = 10V
V
3N170
3N171
1.0
1.5
Gate to Source
Threshold Voltage
VGS(th)
VDS = 10V, ID = 10µA
IGSS
IDSS
ID(on)
gfs
Gate Leakage Current
Drain Leakage Current "Off"
Drain Current "On"
pA
nA
mA
µS
Ω
VGS = -35V, VDS = 0V
10
VDS = 10V, VGS = 0V
10
VGS = 10V, VDS = 10V
Forward Transconductance
1000
VDS = 10V, ID = 2.0mA, f = 1.0kHz
VGS = 10V, ID = 100µA, f = 1.0kHz
VDS = 0V, VGS = 0V, f = 1.0MHz
VDS = 10V, VGS = 0V, f = 1.0MHz
VDB = 10V, f = 1.0MHz
rds(on)
Crss
Ciss
Cdb
Drain to Source "On" Resistance
Reverse Transfer Capacitance
Input Capacitance
200
1.3
5.0
5.0
pF
Drain to Body Capacitance
Linear Integrated Systems
•
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Doc 201139 07/12/13 Rev#A15 ECN# 3N170_3N171