3N170 3N171
N-CHANNEL MOSFET
ENHANCEMENT MODE
Linear Integrated Systems
FEATURES
Direct Replacement for INTERSIL 3N170 & 3N171
LOW DRAIN TO SOURCE RESISTANCE
FAST SWITCHING
rds(on) ≤ 200Ω
td(on) ≤ 3.0ns
TO-72
BOTTOM VIEW
ABSOLUTE MAXIMUM RATINGS1
@ 25 °C (unless otherwise stated)
Maximum Temperatures
Storage Temperature
G
S
2
1
3
4
D
C
-65 to +150 °C
-55 to +135 °C
Operating Junction Temperature
Maximum Power Dissipation
Continuous Power Dissipation
Maximum Current
300mW
30mA
Drain to Source
Maximum Voltages
Drain to Gate
Drain to Source
* Body tied to Case.
±35V
25V
Gate to Source
±35V
ELECTRICAL CHARACTERISTICS @ 25 °C (unless otherwise stated) (VSB = 0V unless otherwise stated)
SYMBOL
BVDSS
VDS(on)
CHARACTERISTIC
Drain to Source Breakdown Voltage
Drain to Source "On" Voltage
MIN TYP MAX UNITS CONDITIONS
25
ID = 10µA, VGS = 0V
2.0
2.0
2.0
10
ID = 10mA, VGS = 10V
V
3N170
3N171
1.0
1.5
Gate to Source
VGS(th)
VDS = 10V, ID = 10µA
Threshold Voltage
IGSS
IDSS
ID(on)
gfs
rds(on)
Crss
Ciss
Cdb
Gate Leakage Current
Drain Leakage Current "Off"
Drain Current "On"
pA
nA
mA
µS
Ω
VGS = -35V, VDS = 0V
VDS = 10V, VGS = 0V
VGS = 10V, VDS = 10V
VDS = 10V, ID = 2.0mA, f = 1.0kHz
VGS = 10V, ID = 0A, f = 1.0kHz
VDS = 0V, VGS = 0V, f = 1.0MHz
VDS = 10V, VGS = 0V, f = 1.0MHz
VDB = 10V, f = 1.0MHz
10
10
1000
Forward Transconductance
Drain to Source "On" Resistance
Reverse Transfer Capacitance
Input Capacitance
200
1.3
5.0
5.0
pF
Drain to Body Capacitance
Linear Integrated Systems • 4042 Clipper Court • Fremont, CA 94538 • Tel: 510 490-9160 • Fax: 510 353-0261