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3N170_TO-72 PDF预览

3N170_TO-72

更新时间: 2022-05-13 11:36:09
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描述
an enhancement mode N-Channel Mosfet

3N170_TO-72 数据手册

  
3N170  
N-CHANNEL MOSFET  
The 3N170 is an enhancement mode N-Channel Mosfet  
FEATURES  
The 3N170 is an enhancement mode N-Channel Mosfet  
designed for use as a General Purpose amplifier or  
switch  
DIRECT REPLACEMENT FOR INTERSIL 3N170  
LOW DRAIN TO SOURCE RESISTANCE  
FAST SWITCHING  
ABSOLUTE MAXIMUM RATINGS  
@ 25°C (unless otherwise noted)  
rDS(on) 200Ω  
td(on) 3.0ns  
The hermetically sealed TO-72 package is well suited  
for high reliability and harsh environment applications.  
(See Packaging Information).  
Maximum Temperatures  
Storage Temperature  
65°C to +150°C  
55°C to +135°C  
Operating Junction Temperature  
Maximum Power Dissipation  
Continuous Power Dissipation  
MAXIMUM CURRENT  
Drain to Source (Note 1)  
MAXIMUM VOLTAGES  
Drain to Gate  
3N170 Features:  
300mW  
30mA  
ƒ
ƒ
ƒ
ƒ
ƒ
Low ON Resistance  
Low Capacitance  
High Gain  
High Gate Breakdown Voltage  
Low Threshold Voltage  
±35V  
25V  
Drain to Source  
Peak Gate to Source (Note 2)  
±35V  
3N170 ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted)  
SYMBOL  
BVDSS  
VDS(on)  
VGS(th)  
IGSS  
IDSS  
ID(on)  
gfs  
CHARACTERISTIC  
Drain to Source Breakdown Voltage  
Drain to Source “On” Voltage  
Gate to Source Threshold Voltage  
Gate Leakage Current  
MIN  
25  
‐‐  
1.0  
‐‐  
‐‐  
TYP.  
‐‐  
‐‐  
‐‐  
‐‐  
‐‐  
‐‐  
‐‐  
MAX  
‐‐  
UNITS  
V
CONDITIONS  
ID = 10µA, VGS = 0V  
ID = 10mA, VGS = 10V  
VDS = 10V, ID = 10µA  
VGS = 35V, VDS = 0V  
VGS = 10V, VDS = 10V  
VGS = 10V, VDS = 10V  
2.0  
2.0  
10  
10  
‐‐  
pA  
nA  
mA  
µS  
Drain Leakage Current “Off”  
Drain Current “On”  
Forward Transconductance  
10  
1000  
‐‐  
VDS = 10V, ID = 2mA , f = 1kHz  
rDS(on)  
Drain to Source “On” Resistance  
‐‐  
‐‐  
200  
Ω
VGS = 10V, ID = 0A, f = 1kHz  
Crss  
Ciss  
Cdb  
Reverse Transfer Capacitance  
Input Capacitance  
Drain to Body Capacitance  
‐‐  
‐‐  
‐‐  
‐‐  
‐‐  
‐‐  
1.3  
5
5.0  
VDS = 0V, VGS = 0V , f = 1MHz  
VDS = 10V, VGS = 0V , f = 1MHz  
pF  
Click To Buy  
VDB = 10V, f = 1MHz  
SWITCHING CHARACTERISTICS  
SYMBOL  
td(on)  
tr  
td(off)  
tf  
CHARACTERISTIC  
MAX  
3
10  
3
UNITS  
ns  
CONDITIONS  
VDD = 10V, ID(on) = 10mA, VGS(on) = 10V, VGS(off) = 0V, RG = 50Ω  
Turn On Delay Time  
Turn On Rise Time  
Turn Off Delay Time  
Turn Off Fall Time  
15  
Note 1 Absolute maximum ratings are limiting values above which 3N170 serviceability may be impaired.  
Micross Components Europe  
Available Packages:  
TO-72 (Bottom View)  
3N170 in TO-72  
3N170 in bare die.  
Tel: +44 1603 788967  
Email: chipcomponents@micross.com  
Web: http://www.micross.com/distribution  
Please contact Micross for full  
package and die dimensions  
* Body tied to case  
Information furnished by Linear Integrated Systems and Micross Components is believed to be accurate and reliable. However, no responsibility is assumed  
for its use; nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise  
under any patent or patent rights of Linear Integrated Systems.  
Micross Components Ltd, United Kingdom, Tel: +44 1603 788967, Fax: +44 1603788920, Email: chipcomponents@micross.com Web: www.micross.com/distribution.aspx  

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