3N171

更新时间： 2024-01-18 16:08:53

品牌	Logo	应用领域
MICROSS		晶体小信号场效应晶体管
页数	文件大小	规格书
1页	272K
描述
an enhancement mode N-Channel Mosfet

阅读下载

获取价格

技术参数
数据手册

如果您发现信息不准确，欢迎纠错

3N171 技术参数

生命周期：	Contact Manufacturer	Reach Compliance Code：	unknown
风险等级：	5.69	Is Samacsys：	N
Base Number Matches：	1

3N171 数据手册

3N171

N-CHANNEL MOSFET

The 3N171 is an enhancement mode N-Channel Mosfet

FEATURES

The 3N171 is an enhancement mode N-Channel Mosfet

designed for use as a General Purpose amplifier or

switch

DIRECT REPLACEMENT FOR INTERSIL 3N171

LOW DRAIN TO SOURCE RESISTANCE

FAST SWITCHING

ABSOLUTE MAXIMUM RATINGS (Note 1)

@ 25°C (unless otherwise noted)

r_DS(on)≤ 200Ω

t_d(on)≤ 3.0ns

The hermetically sealed TO-72 package is well suited

for high reliability and harsh environment applications.

(See Packaging Information).

Maximum Temperatures

Storage Temperature

Operating Junction Temperature

Maximum Power Dissipation

Continuous Power Dissipation

MAXIMUM CURRENT

Drain to Source

MAXIMUM VOLTAGES

Drain to Gate

Drain to Source

‐65°C to +150°C

‐55°C to +135°C

3N171 Features:

300mW

30mA

Low ON Resistance

Low Capacitance

High Gain

High Gate Breakdown Voltage

Low Threshold Voltage

±35V

25V

Peak Gate to Source

±35V

3N171 ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted)

SYMBOL

BV_DSS

V_DS(on)

V_GS(th)

I_GSS

I_DSS

I_D(on)

g_fs

CHARACTERISTIC

Drain to Source Breakdown Voltage

Drain to Source “On” Voltage

Gate to Source Threshold Voltage

Gate Leakage Current

MIN

‐‐

1.5

‐‐

TYP.

‐‐

MAX

‐‐

UNITS

CONDITIONS

I_D= 10µA, V_GS= 0V

I_D= 10mA, V_GS= 10V

V_DS= 10V, I_D= 10µA

V_GS= ‐35V, V_DS= 0V

V_GS= 10V, V_DS= 10V

2.0

‐‐

µS

Drain Leakage Current “Off”

Drain Current “On”

Forward Transconductance

1000

‐‐

V_DS= 10V, I_D= 2mA , f = 1kHz

r_DS(on)

Drain to Source “On” Resistance

‐‐

200

V_GS= 10V, I_D= 0A, f = 1kHz

C_rss

C_iss

C_db

Reverse Transfer Capacitance

Input Capacitance

Drain to Body Capacitance

‐‐

1.3

5.0

V_DS= 0V, V_GS= 0V , f = 1MHz

V_DS= 10V, V_GS= 0V , f = 1MHz

Click To Buy

V_DB= 10V, f = 1MHz

SWITCHING CHARACTERISTICS

SYMBOL

t_d(on)

t_r

t_d(off)

t_f

CHARACTERISTIC

MAX

UNITS

CONDITIONS

V_DD= 10V, I_D(on)= 10mA, V_GS(on)= 10V, V_GS(off)= 0V, R_G= 50Ω

Turn On Delay Time

Turn On Rise Time

Turn Off Delay Time

Turn Off Fall Time

Note 1 ‐ Absolute maximum ratings are limiting values above which 3N171 serviceability may be impaired.

Micross Components Europe

Available Packages:

TO-72 (Bottom View)

3N171 in TO-72

3N171 in bare die.

Tel: +44 1603 788967

Email: chipcomponents@micross.com

Web: http://www.micross.com/distribution

Please contact Micross for full

package and die dimensions

* Body tied to case

Information furnished by Linear Integrated Systems and Micross Components is believed to be accurate and reliable. However, no responsibility is assumed

for its use; nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise

under any patent or patent rights of Linear Integrated Systems.

Micross Components Ltd, United Kingdom, Tel: +44 1603 788967, Fax: +44 1603788920, Email: chipcomponents@micross.com Web: www.micross.com/distribution.aspx

下载PDF

与3N171相关器件

型号	品牌	描述	获取价格	数据表
3N171_TO-72	MICROSS	an enhancement mode N-Channel Mosfet	获取价格
3N171-TO-72-4L-ROHS	Linear	Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,	获取价格
3N172	CALOGIC	Diode Protected P-Channel Enhancement Mode MOSFET General Purpose Amplifier/Switch	获取价格
3N172	NJSEMI	(SINGLE, DUAL) MOS FET P-CHANNEL, ENHANCEMENT	获取价格
3N172	INTERSIL	N-CHANNEL JFET	获取价格
3N172-73	CALOGIC	Diode Protected P-Channel Enhancement Mode MOSFET General Purpose Amplifier/Switch	获取价格

产品中心

服务支持

精选活动

关于我们

帮助中心

3N171

3N171 技术参数

3N171 数据手册

与3N171相关器件

与3N171相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

3N171

3N171 技术参数

3N171 数据手册

与3N171相关器件

与3N171相关文章

您还可以找

您在本页遇到什么问题？