Datasheet > 3N190

3N190

更新时间： 2024-01-26 19:45:25

品牌	Logo	应用领域
Linear Systems		晶体晶体管输入元件放大器
页数	文件大小	规格书
2页	256K
描述
P-CHANNEL DUAL MOSFET ENHANCEMENT MODE

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技术参数
数据手册

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3N190 技术参数

生命周期：	Active	包装说明：	UNCASED CHIP, R-XUUC-X7
Reach Compliance Code：	unknown	风险等级：	5.7
外壳连接：	SUBSTRATE	配置：	SEPARATE, 2 ELEMENTS
最小漏源击穿电压：	40 V	最大漏极电流 (ID)：	0.05 A
最大漏源导通电阻：	300 Ω	FET 技术：	METAL-OXIDE SEMICONDUCTOR
最大反馈电容 (Crss)：	1 pF	JESD-30 代码：	R-XUUC-X7
元件数量：	2	端子数量：	7
工作模式：	ENHANCEMENT MODE	最高工作温度：	150 °C
最低工作温度：	-55 °C	封装主体材料：	UNSPECIFIED
封装形状：	RECTANGULAR	封装形式：	UNCASED CHIP
极性/信道类型：	P-CHANNEL	端子形式：	UNSPECIFIED
端子位置：	UPPER	晶体管元件材料：	SILICON
Base Number Matches：	1

3N190 数据手册

3N190 3N191

P-CHANNEL DUAL MOSFET

ENHANCEMENT MODE

Linear Integrated Systems

FEATURES

DIRECT REPLACEMENT FOR INTERSIL 3N190 & 3N191

LOW GATE LEAKAGE CURRENT

LOW TRANSFER CAPACITANCE

ABSOLUTE MAXIMUM RATINGS¹

@ 25 °C (unless otherwise stated)

Maximum Temperatures

Storage Temperature

I_GSS≤ ±10pA

C_rss≤ 1.0pF

TO-78

BOTTOM VIEW

-65 to +150 °C

-55 to +135 °C

Operating Junction Temperature

Maximum Power Dissipation

Continuous Power Dissipation One Side

Continuous Power Dissipation Both Sides

Maximum Current

300mW

525mW

Drain to Source²

50mA

Maximum Voltages

Drain to Gate²

30V

±125V

±80V

Drain to Source²

Transient Gate to Source^2,3

Gate to Gate

MATCHING CHARACTERISTICS @ 25 °C (unless otherwise stated) (V_BS= 0V unless otherwise stated)

SYMBOL

CHARACTERISTIC

MIN TYP MAX UNITS CONDITIONS

fs1

fs2

Forward Transconductance Ratio

0.85

1.0

_DS= -15V, I_D= -500µA, f = 1kHz

Gate to Source Threshold Voltage

V_GS1-2

100

V_DS= -15V, I_D= -500µA

Differential

∆V^{GS1 − 2}

∆T

∆V^{GS1 − 2}

∆T

Gate to Source Threshold Voltage

Differential with Temperature⁴

V_DS= -15V, I_D= -500µA

100

T_S= -55 TO +25 °C

µV °C

Gate to Source Threshold Voltage

V_DS= -15V, I_D= -500µA

T_S= +25 TO +125 °C

Differential with Temperature⁴

ELECTRICAL CHARACTERISTICS @ 25 °C (unless otherwise stated) (V_SB= 0V unless otherwise stated)

SYMBOL

BV_DSS

BV_SDS

V_GS

CHARACTERISTIC

MIN TYP MAX UNITS CONDITIONS

Drain to Source Breakdown Voltage

Source to Drain Breakdown Voltage

Gate to Source Voltage

-40

-3.0

-2.0

I_D= -10µA

I_S= -10µA, V_BD= 0V

V_DS= -15V, I_D= -500µA

V_DS= V_GS, I_D= -10µA

V_DS= -15V, I_D= -500µA

V_GS= 40V

-6.5

-5.0

V_GS(th)

Gate to Source Threshold Voltage

I_GSSR

I_GSSF

I_DSS

I_SDS

I_D(on)

Reverse Gate Leakage Current

Forward Gate Leakage Current

Drain Leakage Current "Off"

Source to Drain Leakage Current "Off"

Drain Current "On"

-10

V_GS= -40V

V_DS= -15V

V_SD= -15V, V_DB= 0V

V_DS= -15V, V_GS= -10V

-200

-400

-30.0

-5.0

Linear Integrated Systems • 4042 Clipper Court • Fremont, CA 94538 • Tel: 510 490-9160 • Fax: 510 353-0261

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