3N190 3N191
P-CHANNEL DUAL MOSFET
ENHANCEMENT MODE
Linear Integrated Systems
FEATURES
DIRECT REPLACEMENT FOR INTERSIL 3N190 & 3N191
LOW GATE LEAKAGE CURRENT
LOW TRANSFER CAPACITANCE
ABSOLUTE MAXIMUM RATINGS1
@ 25 °C (unless otherwise stated)
Maximum Temperatures
Storage Temperature
IGSS ≤ ±10pA
Crss ≤ 1.0pF
TO-78
BOTTOM VIEW
C
4
3
1
5
7
G1
S1
G2
S2
D2
-65 to +150 °C
-55 to +135 °C
Operating Junction Temperature
Maximum Power Dissipation
Continuous Power Dissipation One Side
Continuous Power Dissipation Both Sides
Maximum Current
2
6
D1
300mW
525mW
Drain to Source2
50mA
Maximum Voltages
Drain to Gate2
30V
30V
±125V
±80V
Drain to Source2
Transient Gate to Source2,3
Gate to Gate
MATCHING CHARACTERISTICS @ 25 °C (unless otherwise stated) (VBS = 0V unless otherwise stated)
SYMBOL
CHARACTERISTIC
MIN TYP MAX UNITS CONDITIONS
g
fs1
g
fs2
Forward Transconductance Ratio
0.85
1.0
V
DS = -15V, ID = -500µA, f = 1kHz
Gate to Source Threshold Voltage
VGS1-2
100
mV
VDS = -15V, ID = -500µA
Differential
∆VGS1 − 2
∆T
∆VGS1 − 2
∆T
Gate to Source Threshold Voltage
Differential with Temperature4
VDS = -15V, ID = -500µA
100
100
TS = -55 TO +25 °C
µV °C
Gate to Source Threshold Voltage
VDS = -15V, ID = -500µA
TS = +25 TO +125 °C
Differential with Temperature4
ELECTRICAL CHARACTERISTICS @ 25 °C (unless otherwise stated) (VSB = 0V unless otherwise stated)
SYMBOL
BVDSS
BVSDS
VGS
CHARACTERISTIC
MIN TYP MAX UNITS CONDITIONS
Drain to Source Breakdown Voltage
Source to Drain Breakdown Voltage
Gate to Source Voltage
-40
-40
-3.0
-2.0
-2.0
ID = -10µA
IS = -10µA, VBD = 0V
VDS = -15V, ID = -500µA
VDS = VGS, ID = -10µA
VDS = -15V, ID = -500µA
VGS = 40V
V
-6.5
-5.0
-5.0
10
VGS(th)
Gate to Source Threshold Voltage
IGSSR
IGSSF
IDSS
ISDS
ID(on)
Reverse Gate Leakage Current
Forward Gate Leakage Current
Drain Leakage Current "Off"
Source to Drain Leakage Current "Off"
Drain Current "On"
-10
VGS = -40V
VDS = -15V
VSD = -15V, VDB = 0V
VDS = -15V, VGS = -10V
pA
-200
-400
-30.0
-5.0
mA
Linear Integrated Systems • 4042 Clipper Court • Fremont, CA 94538 • Tel: 510 490-9160 • Fax: 510 353-0261