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3N191 PDF预览

3N191

更新时间: 2022-11-26 14:05:55
品牌 Logo 应用领域
Linear Systems /
页数 文件大小 规格书
2页 256K
描述
P-CHANNEL DUAL MOSFET ENHANCEMENT MODE

3N191 数据手册

 浏览型号3N191的Datasheet PDF文件第2页 
3N190 3N191  
P-CHANNEL DUAL MOSFET  
ENHANCEMENT MODE  
Linear Integrated Systems  
FEATURES  
DIRECT REPLACEMENT FOR INTERSIL 3N190 & 3N191  
LOW GATE LEAKAGE CURRENT  
LOW TRANSFER CAPACITANCE  
ABSOLUTE MAXIMUM RATINGS1  
@ 25 °C (unless otherwise stated)  
Maximum Temperatures  
Storage Temperature  
IGSS ±10pA  
Crss 1.0pF  
TO-78  
BOTTOM VIEW  
C
4
3
1
5
7
G1  
S1  
G2  
S2  
D2  
-65 to +150 °C  
-55 to +135 °C  
Operating Junction Temperature  
Maximum Power Dissipation  
Continuous Power Dissipation One Side  
Continuous Power Dissipation Both Sides  
Maximum Current  
2
6
D1  
300mW  
525mW  
Drain to Source2  
50mA  
Maximum Voltages  
Drain to Gate2  
30V  
30V  
±125V  
±80V  
Drain to Source2  
Transient Gate to Source2,3  
Gate to Gate  
MATCHING CHARACTERISTICS @ 25 °C (unless otherwise stated) (VBS = 0V unless otherwise stated)  
SYMBOL  
CHARACTERISTIC  
MIN TYP MAX UNITS CONDITIONS  
g
fs1  
g
fs2  
Forward Transconductance Ratio  
0.85  
1.0  
V
DS = -15V, ID = -500µA, f = 1kHz  
Gate to Source Threshold Voltage  
VGS1-2  
100  
mV  
VDS = -15V, ID = -500µA  
Differential  
VGS1 2  
T  
VGS1 2  
T  
Gate to Source Threshold Voltage  
Differential with Temperature4  
VDS = -15V, ID = -500µA  
100  
100  
TS = -55 TO +25 °C  
µV °C  
Gate to Source Threshold Voltage  
VDS = -15V, ID = -500µA  
TS = +25 TO +125 °C  
Differential with Temperature4  
ELECTRICAL CHARACTERISTICS @ 25 °C (unless otherwise stated) (VSB = 0V unless otherwise stated)  
SYMBOL  
BVDSS  
BVSDS  
VGS  
CHARACTERISTIC  
MIN TYP MAX UNITS CONDITIONS  
Drain to Source Breakdown Voltage  
Source to Drain Breakdown Voltage  
Gate to Source Voltage  
-40  
-40  
-3.0  
-2.0  
-2.0  
ID = -10µA  
IS = -10µA, VBD = 0V  
VDS = -15V, ID = -500µA  
VDS = VGS, ID = -10µA  
VDS = -15V, ID = -500µA  
VGS = 40V  
V
-6.5  
-5.0  
-5.0  
10  
VGS(th)  
Gate to Source Threshold Voltage  
IGSSR  
IGSSF  
IDSS  
ISDS  
ID(on)  
Reverse Gate Leakage Current  
Forward Gate Leakage Current  
Drain Leakage Current "Off"  
Source to Drain Leakage Current "Off"  
Drain Current "On"  
-10  
VGS = -40V  
VDS = -15V  
VSD = -15V, VDB = 0V  
VDS = -15V, VGS = -10V  
pA  
-200  
-400  
-30.0  
-5.0  
mA  
Linear Integrated Systems • 4042 Clipper Court • Fremont, CA 94538 • Tel: 510 490-9160 • Fax: 510 353-0261  

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