Datasheet > 3N165-6

3N165-6

更新时间： 2022-11-25 19:10:22

品牌	Logo	应用领域
Linear Systems		/
页数	文件大小	规格书
2页	21K
描述
MONOLITHIC DUAL P-CHANNEL ENHANCEMENT MODE MOSFET

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数据手册

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3N165-6 数据手册

3N165, 3N166

MONOLITHIC DUAL P-CHANNEL

^{ENHANCEMENT MODE}MOSFET

Linear Integrated Systems

FEATURES

VERY HIGH INPUT IMPEDANCE

HIGH GATE BREAKDOWN

ULTRA LOW LEAKAGE

LOW CAPACITANCE

ABSOLUTE MAXIMUM RATINGS (NOTE 1)

(T_A= 25°C unless otherwise noted)

Drain-Source or Drain-Gate Voltage (NOTE 2)

3N165

3N166

Transient G-S Voltage (NOTE 3)

Gate-Gate Voltage

Drain Current (NOTE 2)

40 V

30 V

±125 V

±80 V

50 mA

Storage Temperature

Operating Temperature

Lead Temperature (Soldering, 10 sec.)

Power Dissipation (One Side)

Total Derating above 25°C

-65°C to +200°C

-55°C to +150°C

+300°C

300 mW

4.2 mW/°C

TO-99

Bottom View

Device Schematic

ELECTRICAL CHARACTERISTICS (T_A=25°C and V_BS=0 unless otherwise specified)

LIMITS

SYMBOL

I_GSSR

CHARACTERISTICS

Gate Reverse Leakage Current

Gate Forward Leakage Current

MIN. MAX.

UNITS

CONDITIONS

-10

-25

-200

-400

-30

-5

V_GS= 40 V

V_GS= -40 V

T_A=+125°C

V_DS= -20 V

V_SD= -20 V

V_DS= -15 V

V_DS= V_GS

I_GSSF

I_DSS

Drain to Source Leakage Current

Source to Drain Leakage Current

On Drain Current

I_SDS

V_DB= 0

I_D(on)

V_GS(th)

r_DS(on)

g_fs

-5

-2

V_GS= -10 V

I_D= -10 µA

I_D= -100 µA

I_D= -10mA

Gate Source Threshold Voltage

Drain Source ON Resistance

Forward Transconductance

Output Admittance

-5

300

3000

300

3.0

0.7

3.0

ohms

µs

V_GS= -20 V

V_DS= -15V

1500

f=1kHz

g_os

µs

C_iss

Input Capacitance

C_rss

Reverse Transfer Capacitance

Output Capacitance

V_DS= -15V

(NOTE 4)

V_DS= -15V

(NOTE 4)

I_D= -10mA

f=1MHz

C_oss

R_E(Y_fs)

Common Source Forward Transconductance 1200

µs

f=100MHz

Linear Integrated Systems 4042 Clipper Ct., Fremont, CA 94538 TEL: (510) 490-9160 • FAX: (510) 353-0261

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