Datasheet > 3N170

3N170

更新时间： 2022-11-25 19:10:22

品牌	Logo	应用领域
Linear Systems		/
页数	文件大小	规格书
2页	199K
描述
N-CHANNEL MOSFET ENHANCEMENT MODE

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3N170 数据手册

3N170 3N171

N-CHANNEL MOSFET

ENHANCEMENT MODE

Linear Integrated Systems

FEATURES

Direct Replacement for INTERSIL 3N170 & 3N171

LOW DRAIN TO SOURCE RESISTANCE

FAST SWITCHING

r_ds(on)≤ 200Ω

t_d(on)≤ 3.0ns

TO-72

BOTTOM VIEW

ABSOLUTE MAXIMUM RATINGS¹

@ 25 °C (unless otherwise stated)

Maximum Temperatures

Storage Temperature

-65 to +150 °C

-55 to +135 °C

Operating Junction Temperature

Maximum Power Dissipation

Continuous Power Dissipation

Maximum Current

300mW

30mA

Drain to Source

Maximum Voltages

Drain to Gate

Drain to Source

* Body tied to Case.

±35V

25V

Gate to Source

±35V

ELECTRICAL CHARACTERISTICS @ 25 °C (unless otherwise stated) (V_SB= 0V unless otherwise stated)

SYMBOL

BV_DSS

V_DS(on)

CHARACTERISTIC

Drain to Source Breakdown Voltage

Drain to Source "On" Voltage

MIN TYP MAX UNITS CONDITIONS

I_D= 10µA, V_GS= 0V

2.0

I_D= 10mA, V_GS= 10V

3N170

3N171

1.0

1.5

Gate to Source

V_GS(th)

V_DS= 10V, I_D= 10µA

Threshold Voltage

I_GSS

I_DSS

I_D(on)

g_fs

r_ds(on)

C_rss

C_iss

C_db

Gate Leakage Current

Drain Leakage Current "Off"

Drain Current "On"

µS

Ω

V_GS= -35V, V_DS= 0V

V_DS= 10V, V_GS= 0V

V_GS= 10V, V_DS= 10V

V_DS= 10V, I_D= 2.0mA, f = 1.0kHz

V_GS= 10V, I_D= 0A, f = 1.0kHz

V_DS= 0V, V_GS= 0V, f = 1.0MHz

V_DS= 10V, V_GS= 0V, f = 1.0MHz

V_DB= 10V, f = 1.0MHz

1000

Forward Transconductance

Drain to Source "On" Resistance

Reverse Transfer Capacitance

Input Capacitance

200

1.3

5.0

Drain to Body Capacitance

Linear Integrated Systems • 4042 Clipper Court • Fremont, CA 94538 • Tel: 510 490-9160 • Fax: 510 353-0261

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