Datasheet > 2SK4104

2SK4104

更新时间： 2024-09-28 17:47:03

品牌	Logo	应用领域
东芝 - TOSHIBA		局域网晶体管
页数	文件大小	规格书
6页	219K
描述
TRANSISTOR 5 A, 500 V, 1.5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220NIS, 3 PIN, FET General Purpose Power

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技术参数
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2SK4104 技术参数

生命周期：	Obsolete	零件包装代码：	TO-220NI
包装说明：	FLANGE MOUNT, R-PSFM-T3	针数：	3
Reach Compliance Code：	unknown	风险等级：	5.82
最小漏源击穿电压：	500 V	最大漏极电流 (ID)：	5 A
最大漏源导通电阻：	1.5 Ω	FET 技术：	METAL-OXIDE SEMICONDUCTOR
JESD-30 代码：	R-PSFM-T3	元件数量：	1
端子数量：	3	工作模式：	ENHANCEMENT MODE
封装主体材料：	PLASTIC/EPOXY	封装形状：	RECTANGULAR
封装形式：	FLANGE MOUNT	极性/信道类型：	N-CHANNEL
认证状态：	Not Qualified	表面贴装：	NO
端子形式：	THROUGH-HOLE	端子位置：	SINGLE
晶体管元件材料：	SILICON	Base Number Matches：	1

2SK4104 数据手册

2SK4104

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSVI)

2SK4104

Switching Regulator Applications

Unit: mm

•

Low drain-source ON resistance: R

= 1.35 Ω (typ.)

DS (ON)

High forward transfer admittance: |Y | = 3.5 S (typ.)

Low leakage current: I

= 100 μA (V

= 500 V)

DSS

Enhancement mode: V = 2.0 to 4.0 V (V

= 10 V, I = 1 mA)

Absolute Maximum Ratings (Ta = 25°C)

Characteristics

Drain-source voltage

Symbol

Rating

Unit

500

±30

DSS

Drain-gate voltage (R

Gate-source voltage

= 20 kΩ)

DGR

GSS

(Note 1)

Drain current

Pulse (t = 1 ms)

(Note 1)

Drain power dissipation (Tc = 25°C)

JEDEC

JEITA

―

Single pulse avalanche energy

SC-67

2-10R1B

180

(Note 2)

TOSHIBA

Avalanche current

3.5

Weight: 1.9 g (typ.)

Repetitive avalanche energy (Note 3)

Channel temperature

°C

150

Storage temperature range

-55 to 150

stg

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.

operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate

reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and

Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).

Thermal Characteristics

Characteristics

Symbol

Max

Unit

Thermal resistance, channel to case

Thermal resistance, channel to ambient

3.57

62.5

°C/W

th (ch-c)

th (ch-a)

Note 1: Ensure that the channel temperature does not exceed 150℃.

Note 2: = 90 V, T = 25°C(initial), L = 12.2 mH, I = 5 A, R = 25 Ω

Note 3: Repetitive rating: pulse width limited by maximum channel temperature

This transistor is an electrostatic-sensitive device. Please handle with caution.

2009-09-29

12 3 4 5 6

中文翻译

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与2SK4104相关器件

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2SK4105	TOSHIBA	获取价格	TRANSISTOR 8 A, 500 V, 0.85 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220NIS, FET General Purp
2SK4107	TOSHIBA	获取价格	Switching Regulator Applications
2SK4107(F)	TOSHIBA	获取价格	2SK4107(F)
2SK4107_09	TOSHIBA	获取价格	Switching Regulator Applications
2SK4108	TOSHIBA	获取价格	Silicon N-Channel MOS Type Switching Regulator Applications
2SK4108(F,T)	TOSHIBA	获取价格	MOSFET N-CH 500V 20A SC-67
2SK4110	TOSHIBA	获取价格	TRANSISTOR 6 A, 600 V, 1.25 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220NIS, 3 PIN, FET Gener
2SK4111	TOSHIBA	获取价格	TRANSISTOR 10 A, 600 V, 0.75 ohm, N-CHANNEL, Si, POWER, MOSFET, LEAD FREE, 2-10R1B, SC-67,
2SK4112	TOSHIBA	获取价格	TRANSISTOR 10 A, 600 V, 1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220NIS, 3 PIN, FET General
2SK4113	TOSHIBA	获取价格	TRANSISTOR 5 A, 900 V, 2.5 ohm, N-CHANNEL, Si, POWER, MOSFET, SC-67, 3 PIN, FET General Pu

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