2SK4108

更新时间： 2024-11-16 03:56:43

品牌	Logo	应用领域
东芝 - TOSHIBA		稳压器开关
页数	文件大小	规格书
6页	287K
描述
Silicon N-Channel MOS Type Switching Regulator Applications

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中文翻译

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2SK4108 数据手册

2SK4108

TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π-MOS VI)

2SK4108

Switching Regulator Applications

Unit: mm

z Low drain−source ON resistance

z High forward transfer admittance

: R

= 0. 21Ω (typ.)

DS (ON)

: |Y | = 14 S (typ.)

z Low leakage current

z Enhancement mode

: I

= 100 μA (max) (V

= 500 V)

DSS

: V = 2.0~4.0 V (V

= 10 V, I = 1 mA)

Absolute Maximum Ratings (Ta = 25°C)

Characteristic

Drain−source voltage

Symbol

Rating

Unit

500

±30

DSS

Drain−gate voltage (R

Gate−source voltage

= 20 kΩ)

DGR

GSS

DC (Note 1)

Pulse (Note 1)

Drain current

1. GATE

Drain power dissipation (Tc = 25°C)

150

2. DRAIN (HEAT SINK)

3. SOURCE

Single-pulse avalanche energy

960

(Note 2)

Avalanche current

JEDEC

JEITA

―

Repetitive avalanche energy (Note 3)

Channel temperature

°C

150

TOSHIBA

2-16C1B

Storage temperature range

−55~150

stg

Weight: 4.6 g (typ.)

Note: Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in temperature,

etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating

temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon

reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and

individual reliability data (i.e. reliability test report and estimated failure rate, etc).

Thermal Characteristics

Characteristic

Symbol

Max

0.833

Unit

Thermal resistance, channel to case

°C / W

th (ch−c)

th (ch−a)

Thermal resistance, channel to

ambient

Note 1: Ensure that the channel temperature does not exceed 150°C.

Note 2: = 90 V, T = 25°C (initial), L = 4.08 mH, R = 25 Ω, I = 20 A

Note 3: Repetitive rating: pulse width limited by maximum channel temperature

This transistor is an electrostatic-sensitive device. Handle with care.

2007-06-29

12 3 4 5 6

中文翻译

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与2SK4108相关器件

型号	品牌	获取价格	描述	数据表
2SK4108(F,T)	TOSHIBA	获取价格	MOSFET N-CH 500V 20A SC-67
2SK4110	TOSHIBA	获取价格	TRANSISTOR 6 A, 600 V, 1.25 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220NIS, 3 PIN, FET Gener
2SK4111	TOSHIBA	获取价格	TRANSISTOR 10 A, 600 V, 0.75 ohm, N-CHANNEL, Si, POWER, MOSFET, LEAD FREE, 2-10R1B, SC-67,
2SK4112	TOSHIBA	获取价格	TRANSISTOR 10 A, 600 V, 1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220NIS, 3 PIN, FET General
2SK4113	TOSHIBA	获取价格	TRANSISTOR 5 A, 900 V, 2.5 ohm, N-CHANNEL, Si, POWER, MOSFET, SC-67, 3 PIN, FET General Pu
2SK4114	TOSHIBA	获取价格	TRANSISTOR 5 A, 900 V, 2.5 ohm, N-CHANNEL, Si, POWER, MOSFET, SC-67, 3 PIN, FET General Pu
2SK4115	TOSHIBA	获取价格	Switching Regulator Applications
2SK4116LS	SANYO	获取价格	N-Channel Silicon MOSFET General-Purpose Switching Device
2SK4116LS_0710	SANYO	获取价格	General-Purpose Switching Device Applications
2SK4117LS	SANYO	获取价格	N-Channel Silicon MOSFET General-Purpose Switching Device

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