Datasheet > 2SK4113

2SK4113

更新时间： 2024-09-28 21:20:47

品牌	Logo	应用领域
东芝 - TOSHIBA		开关脉冲晶体管
页数	文件大小	规格书
6页	203K
描述
TRANSISTOR 5 A, 900 V, 2.5 ohm, N-CHANNEL, Si, POWER, MOSFET, SC-67, 3 PIN, FET General Purpose Power

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2SK4113 技术参数

生命周期：	Obsolete	零件包装代码：	SC-67
包装说明：	IN-LINE, R-PSIP-T3	针数：	3
Reach Compliance Code：	unknown	风险等级：	5.82
雪崩能效等级（Eas）：	595 mJ	配置：	SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压：	900 V	最大漏极电流 (ID)：	5 A
最大漏源导通电阻：	2.5 Ω	FET 技术：	METAL-OXIDE SEMICONDUCTOR
JESD-30 代码：	R-PSIP-T3	JESD-609代码：	e0
元件数量：	1	端子数量：	3
工作模式：	ENHANCEMENT MODE	封装主体材料：	PLASTIC/EPOXY
封装形状：	RECTANGULAR	封装形式：	IN-LINE
极性/信道类型：	N-CHANNEL	最大脉冲漏极电流 (IDM)：	15 A
认证状态：	Not Qualified	表面贴装：	NO
端子面层：	TIN LEAD	端子形式：	THROUGH-HOLE
端子位置：	SINGLE	晶体管应用：	SWITCHING
晶体管元件材料：	SILICON	Base Number Matches：	1

2SK4113 数据手册

2SK4113

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSIV)

2SK4113

Switching Regulator Applications

Unit: mm

•

Low drain-source ON resistance: R

= 2.0 Ω (typ.)

DS (ON)

High forward transfer admittance: |Y | = 4.5 S (typ.)

Low leakage current: I

= 100 μA (max) (V

= 720 V)

DSS

Enhancement mode: V = 2.0 to 4.0 V (V

= 10 V, I = 1 mA)

Absolute Maximum Ratings (Ta = 25°C)

Characteristics

Drain-source voltage

Symbol

Rating

Unit

900

±30

DSS

Drain-gate voltage (R

Gate-source voltage

= 20 kΩ)

DGR

GSS

(Note 1)

Drain current

Pulse (t = 1 ms)

(Note 1)

Drain power dissipation (Tc = 25°C)

JEDEC

JEITA

―

Single pulse avalanche energy

595

(Note 2)

SC-67

2-10R1B

Avalanche current

4.5

TOSHIBA

Repetitive avalanche energy (Note 3)

Channel temperature

°C

Weight: 1.9 g (typ.)

150

Storage temperature range

-55 to 150

stg

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.

operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate

reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and

Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).

Thermal Characteristics

Characteristics

Symbol

Max

Unit

Thermal resistance, channel to case

Thermal resistance, channel to ambient

2.78

62.5

°C/W

th (ch-c)

th (ch-a)

Note 1: Ensure that the channel temperature does not exceed 150℃.

Note 2: = 90 V, T = 25°C(Initial), L = 43.6 mH, I = 5.0 A, R = 25 Ω

Note 3: Repetitive rating: pulse width limited by maximum channel temperature

This transistor is an electrostatic-sensitive device. Please handle with caution.

2009-09-29

12 3 4 5 6

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与2SK4113相关器件

型号	品牌	获取价格	描述	数据表
2SK4114	TOSHIBA	获取价格	TRANSISTOR 5 A, 900 V, 2.5 ohm, N-CHANNEL, Si, POWER, MOSFET, SC-67, 3 PIN, FET General Pu
2SK4115	TOSHIBA	获取价格	Switching Regulator Applications
2SK4116LS	SANYO	获取价格	N-Channel Silicon MOSFET General-Purpose Switching Device
2SK4116LS_0710	SANYO	获取价格	General-Purpose Switching Device Applications
2SK4117LS	SANYO	获取价格	N-Channel Silicon MOSFET General-Purpose Switching Device
2SK4117LS_0710	SANYO	获取价格	General-Purpose Switching Device Applications
2SK4118LS	SANYO	获取价格	N-Channel Silicon MOSFET General-Purpose Switching Device
2SK4119LS	SANYO	获取价格	N-Channel Silicon MOSFET General-Purpose Switching Device
2SK412	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 250V V(BR)DSS \| 10A I(D) \| TO-247VAR
2SK4120LS	SANYO	获取价格	N-Channel Silicon MOSFET General-Purpose Switching Device

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