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2SK4115 PDF预览

2SK4115

更新时间： 2024-11-16 03:56:43
品牌 Logo 应用领域
东芝 - TOSHIBA 稳压器开关
页数 文件大小 规格书
3页 151K
描述
Switching Regulator Applications

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中文翻译

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2SK4115 技术参数

是否Rohs认证： 符合生命周期：Active
零件包装代码：SC-65包装说明：FLANGE MOUNT, R-PSFM-T3
针数：3Reach Compliance Code：unknown
风险等级：5.43雪崩能效等级（Eas）：491 mJ
外壳连接：DRAIN配置：SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压：900 V最大漏极电流 (Abs) (ID)：7 A
最大漏极电流 (ID)：7 A最大漏源导通电阻：2 Ω
FET 技术：METAL-OXIDE SEMICONDUCTORJESD-30 代码：R-PSFM-T3
元件数量：1端子数量：3
工作模式：ENHANCEMENT MODE最高工作温度：150 °C
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：FLANGE MOUNT峰值回流温度（摄氏度）：NOT SPECIFIED
极性/信道类型：N-CHANNEL最大功率耗散 (Abs)：150 W
最大脉冲漏极电流 (IDM)：21 A认证状态：Not Qualified
子类别：FET General Purpose Power表面贴装：NO
端子形式：THROUGH-HOLE端子位置：SINGLE
处于峰值回流温度下的最长时间：NOT SPECIFIED晶体管应用：SWITCHING
晶体管元件材料：SILICON

2SK4115 数据手册

 浏览型号2SK4115的Datasheet PDF文件第2页浏览型号2SK4115的Datasheet PDF文件第3页 
2SK4115  
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π- MOSⅣ)  
2SK4115  
Switching Regulator Applications  
Unit: mm  
Ф3.2±0.2  
15.9max.  
•
•
•
•
Low drain-source ON resistance: R  
= 1.6 Ω (typ.)  
DS (ON)  
High forward transfer admittance: ⎪Y ⎪ = 5.0 S (typ.)  
fs  
Low leakage current: I  
= 100 μA (max) (V  
= 720 V)  
DSS  
DS  
Enhancement model: V = 2.0~4.0 V (V  
= 10 V, I = 1 mA)  
D
th  
DS  
Absolute Maximum Ratings (Ta = 25°C)  
2.0±0.3  
＋0.3  
1.0  
Characteristic  
Drain-source voltage  
Symbol  
Rating  
Unit  
－0.25  
V
900  
900  
±30  
7
V
V
V
5.45±0.2  
5.45±0.2  
DSS  
Drain-gate voltage (R  
Gate-source voltage  
= 20 kΩ)  
V
DGR  
GS  
V
GSS  
DC  
(Note 1)  
I
1
2
3
D
Drain current  
A
1. GATE  
Pulse (Note 1)  
I
21  
DP  
2. DRAIN (HEATSINK)  
3. SOURCE  
Drain power dissipation (Tc = 25°C)  
P
150  
W
D
AS  
AR  
Single pulse avalanche energy  
E
491  
mJ  
(Note 2)  
JEDEC  
―
Avalanche current  
I
7
15  
A
JEITA  
SC-65  
2−16C1B  
Repetitive avalanche energy (Note 3)  
Channel temperature  
E
mJ  
°C  
°C  
AR  
TOSHIBA  
T
150  
ch  
Weight: 4.6 g (typ.)  
Storage temperature range  
T
−55~150  
stg  
Note: Using continuously under heavy loads (e.g. the application of high  
temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the  
reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the  
absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability  
Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report  
and estimated failure rate, etc).  
Thermal Characteristics  
2
Characteristic  
Symbol  
Max  
Unit  
Thermal resistance, channel to case  
Thermal resistance, channel to ambient  
R
0.833  
50  
°C/W  
°C/W  
th (ch-c)  
R
th (ch-a)  
1
Note 1: Ensure that the channel temperature does not exceed 150°C  
during use of the device.  
Note 2:  
V
DD  
= 90 V, T = 25°C, L = 18.4 mH, R = 25 Ω, I  
= 7 A  
AR  
ch  
G
Note 3: Repetitive rating: pulse width limited by max junction temperature  
This transistor is an electrostatic-sensitive device. Handle with care.  
3
1
2007-07-24  
123

中文翻译

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