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2SK4114 PDF预览

2SK4114

更新时间： 2024-11-16 20:09:39
品牌 Logo 应用领域
东芝 - TOSHIBA 开关脉冲晶体管
页数 文件大小 规格书
6页 176K
描述
TRANSISTOR 5 A, 900 V, 2.5 ohm, N-CHANNEL, Si, POWER, MOSFET, SC-67, 3 PIN, FET General Purpose Power

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2SK4114 技术参数

生命周期：Obsolete零件包装代码：SC-67
包装说明：IN-LINE, R-PSIP-T3针数：3
Reach Compliance Code：unknown风险等级：5.82
雪崩能效等级（Eas）：595 mJ配置：SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压：900 V最大漏极电流 (ID)：5 A
最大漏源导通电阻：2.5 ΩFET 技术：METAL-OXIDE SEMICONDUCTOR
JESD-30 代码：R-PSIP-T3JESD-609代码：e0
元件数量：1端子数量：3
工作模式：ENHANCEMENT MODE封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：IN-LINE
极性/信道类型：N-CHANNEL最大脉冲漏极电流 (IDM)：15 A
认证状态：Not Qualified表面贴装：NO
端子面层：TIN LEAD端子形式：THROUGH-HOLE
端子位置：SINGLE晶体管应用：SWITCHING
晶体管元件材料：SILICONBase Number Matches：1

2SK4114 数据手册

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2SK4114  
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π-MOSIV)  
2SK4114  
Switching Regulator Applications  
Unit: mm  
•
•
•
•
Low drain-source ON resistance: R  
= 2.2 Ω (typ.)  
DS (ON)  
High forward transfer admittance: |Y | = 3.5 S (typ.)  
fs  
Low leakage current: I  
= 100 μA (max) (V  
= 720 V)  
DSS  
DS  
Enhancement model: V = 4.0 to 5.0 V (V  
= 10 V, I = 1 mA)  
D
th  
DS  
Absolute Maximum Ratings (Ta = 25°C)  
Characteristic  
Drain-source voltage  
Symbol  
Rating  
Unit  
V
900  
900  
±30  
5
V
V
V
DSS  
Drain-gate voltage (R  
Gate-source voltage  
= 20 kΩ)  
V
GS  
DGR  
V
GSS  
DC  
(Note 1)  
I
D
Drain current  
A
Pulse (t = 1 ms)  
I
15  
45  
DP  
(Note 1)  
Drain power dissipation (Tc = 25°C)  
P
W
D
AS  
AR  
Single pulse avalanche energy  
E
595  
mJ  
JEDEC  
JEITA  
―
(Note 2)  
Avalanche current  
I
5
4.5  
A
SC-67  
2-10R1B  
Repetitive avalanche energy (Note 3)  
Channel temperature  
E
mJ  
°C  
°C  
AR  
TOSHIBA  
T
150  
ch  
Weight: 1.9 g (typ.)  
Storage temperature range  
T
-55~150  
stg  
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in  
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.  
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate  
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and  
Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).  
Thermal Characteristics  
Characteristic  
Symbol  
Max  
Unit  
Thermal resistance, channel to case  
Thermal resistance, channel to ambient  
R
2.78  
62.5  
°C/W  
°C/W  
th (ch-c)  
R
th (ch-a)  
Note 1: Ensure that the channel temperature does not exceed 150°C during use of the device.  
Note 2: V = 90 V, T = 25°C (initial), L = 43.6 mH, I = 5.0 A, R = 25 Ω  
DD  
ch  
AR  
G
Note 3: Repetitive rating: pulse width limited by maximum channel temperature  
This transistor is an electrostatic-sensitive device. Handle with care.  
1
2009-09-29  
123456

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