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2SK4112

更新时间： 2024-11-16 21:11:23
品牌 Logo 应用领域
东芝 - TOSHIBA 局域网晶体管
页数 文件大小 规格书
6页 209K
描述
TRANSISTOR 10 A, 600 V, 1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220NIS, 3 PIN, FET General Purpose Power

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中文翻译

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2SK4112 技术参数

生命周期：Obsolete零件包装代码：TO-220NI
包装说明：FLANGE MOUNT, R-PSFM-T3针数：3
Reach Compliance Code：unknown风险等级：5.79
最小漏源击穿电压：600 V最大漏极电流 (ID)：10 A
最大漏源导通电阻：1 ΩFET 技术：METAL-OXIDE SEMICONDUCTOR
JESD-30 代码：R-PSFM-T3元件数量：1
端子数量：3工作模式：ENHANCEMENT MODE
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：FLANGE MOUNT极性/信道类型：N-CHANNEL
认证状态：Not Qualified表面贴装：NO
端子形式：THROUGH-HOLE端子位置：SINGLE
晶体管元件材料：SILICONBase Number Matches：1

2SK4112 数据手册

 浏览型号2SK4112的Datasheet PDF文件第2页浏览型号2SK4112的Datasheet PDF文件第3页浏览型号2SK4112的Datasheet PDF文件第4页浏览型号2SK4112的Datasheet PDF文件第5页浏览型号2SK4112的Datasheet PDF文件第6页 
2SK4112  
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSVI)  
2SK4112  
Switching Regulator Applications  
Unit: mm  
•
•
•
•
Low drain-source ON resistance: R  
= 0.75 Ω (typ.)  
DS (ON)  
High forward transfer admittance: |Y | = 5.5 S (typ.)  
fs  
Low leakage current: I  
= 100 μA (V  
= 600 V)  
DSS  
DS  
Enhancement mode: V = 2.0 to 4.0 V (V  
= 10 V, I = 1 mA)  
th  
DS  
D
Absolute Maximum Ratings (Ta = 25°C)  
Characteristics  
Drain-source voltage  
Symbol  
Rating  
Unit  
V
600  
600  
±30  
10  
V
V
V
DSS  
Drain-gate voltage (R  
Gate-source voltage  
= 20 kΩ)  
V
GS  
DGR  
V
GSS  
DC  
(Note 1)  
I
D
Drain current  
A
Pulse (t = 1 ms)  
I
30  
45  
DP  
(Note 1)  
JEDEC  
JEITA  
―
Drain power dissipation (Tc = 25°C)  
P
W
D
AS  
AR  
SC-67  
2-10R1B  
Single pulse avalanche energy  
E
251  
mJ  
TOSHIBA  
(Note 2)  
Avalanche current  
I
10  
4.5  
A
Weight: 1.9 g (typ.)  
Repetitive avalanche energy (Note 3)  
Channel temperature  
E
mJ  
°C  
°C  
AR  
T
150  
ch  
Storage temperature range  
T
-55~150  
stg  
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in  
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.  
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate  
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and  
Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).  
Thermal Characteristics  
Characteristics  
Symbol  
Max  
Unit  
Thermal resistance, channel to case  
Thermal resistance, channel to ambient  
R
2.78  
62.5  
°C/W  
°C/W  
th (ch-c)  
R
th (ch-a)  
Note 1: Ensure that the channel temperature does not exceed 150℃.  
Note 2: = 90 V, T = 25°C, L = 4.39 mH, I = 10 A, R = 25 Ω  
V
DD  
ch  
AR  
G
Note 3: Repetitive rating: pulse width limited by maximum channel temperature  
This transistor is an electrostatic-sensitive device. Please handle with caution.  
1
2009-09-29  
123456

中文翻译

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