2SK4108(F,T)

更新时间： 2024-11-16 13:02:59

品牌	Logo	应用领域
东芝 - TOSHIBA		稳压器开关
页数	文件大小	规格书
6页	287K
描述
MOSFET N-CH 500V 20A SC-67

阅读下载

中文翻译

获取价格

技术参数
数据手册

如果您发现信息不准确，欢迎纠错

2SK4108(F,T) 技术参数

生命周期：	Active	Reach Compliance Code：	unknown
风险等级：	5.58	Base Number Matches：	1

2SK4108(F,T) 数据手册

2SK4108

TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π-MOS VI)

2SK4108

Switching Regulator Applications

Unit: mm

z Low drain−source ON resistance

z High forward transfer admittance

: R

= 0. 21Ω (typ.)

DS (ON)

: |Y | = 14 S (typ.)

z Low leakage current

z Enhancement mode

: I

= 100 μA (max) (V

= 500 V)

DSS

: V = 2.0~4.0 V (V

= 10 V, I = 1 mA)

Absolute Maximum Ratings (Ta = 25°C)

Characteristic

Drain−source voltage

Symbol

Rating

Unit

500

±30

DSS

Drain−gate voltage (R

Gate−source voltage

= 20 kΩ)

DGR

GSS

DC (Note 1)

Pulse (Note 1)

Drain current

1. GATE

Drain power dissipation (Tc = 25°C)

150

2. DRAIN (HEAT SINK)

3. SOURCE

Single-pulse avalanche energy

960

(Note 2)

Avalanche current

JEDEC

JEITA

―

Repetitive avalanche energy (Note 3)

Channel temperature

°C

150

TOSHIBA

2-16C1B

Storage temperature range

−55~150

stg

Weight: 4.6 g (typ.)

Note: Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in temperature,

etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating

temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon

reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and

individual reliability data (i.e. reliability test report and estimated failure rate, etc).

Thermal Characteristics

Characteristic

Symbol

Max

0.833

Unit

Thermal resistance, channel to case

°C / W

th (ch−c)

th (ch−a)

Thermal resistance, channel to

ambient

Note 1: Ensure that the channel temperature does not exceed 150°C.

Note 2: = 90 V, T = 25°C (initial), L = 4.08 mH, R = 25 Ω, I = 20 A

Note 3: Repetitive rating: pulse width limited by maximum channel temperature

This transistor is an electrostatic-sensitive device. Handle with care.

2007-06-29

12 3 4 5 6

中文翻译

下载PDF

与2SK4108(F,T)相关器件

型号	品牌	获取价格	描述	数据表
2SK4110	TOSHIBA	获取价格	TRANSISTOR 6 A, 600 V, 1.25 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220NIS, 3 PIN, FET Gener
2SK4111	TOSHIBA	获取价格	TRANSISTOR 10 A, 600 V, 0.75 ohm, N-CHANNEL, Si, POWER, MOSFET, LEAD FREE, 2-10R1B, SC-67,
2SK4112	TOSHIBA	获取价格	TRANSISTOR 10 A, 600 V, 1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220NIS, 3 PIN, FET General
2SK4113	TOSHIBA	获取价格	TRANSISTOR 5 A, 900 V, 2.5 ohm, N-CHANNEL, Si, POWER, MOSFET, SC-67, 3 PIN, FET General Pu
2SK4114	TOSHIBA	获取价格	TRANSISTOR 5 A, 900 V, 2.5 ohm, N-CHANNEL, Si, POWER, MOSFET, SC-67, 3 PIN, FET General Pu
2SK4115	TOSHIBA	获取价格	Switching Regulator Applications
2SK4116LS	SANYO	获取价格	N-Channel Silicon MOSFET General-Purpose Switching Device
2SK4116LS_0710	SANYO	获取价格	General-Purpose Switching Device Applications
2SK4117LS	SANYO	获取价格	N-Channel Silicon MOSFET General-Purpose Switching Device
2SK4117LS_0710	SANYO	获取价格	General-Purpose Switching Device Applications

与2SK4108(F,T)相关文章

解析光耦仿真器：升级光耦合器技术的必要性
2024-11-18

13
英伟达新一代Blackwell GPU过热问题致交付延迟
2024-11-18

7
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

35
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

31

产品中心

服务支持

精选活动

关于我们

帮助中心

2SK4108(F,T)

2SK4108(F,T) 技术参数

2SK4108(F,T) 数据手册

与2SK4108(F,T)相关器件

与2SK4108(F,T)相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

2SK4108(F,T)

2SK4108(F,T) 技术参数

2SK4108(F,T) 数据手册

与2SK4108(F,T)相关器件

与2SK4108(F,T)相关文章

您还可以找

您在本页遇到什么问题？