Datasheet > 2SK4105

2SK4105

更新时间： 2024-09-28 14:46:23

品牌	Logo	应用领域
东芝 - TOSHIBA		局域网晶体管
页数	文件大小	规格书
6页	212K
描述
TRANSISTOR 8 A, 500 V, 0.85 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220NIS, FET General Purpose Power

阅读下载

中文翻译

获取价格

技术参数
数据手册

如果您发现信息不准确，欢迎纠错

2SK4105 技术参数

生命周期：	Obsolete	零件包装代码：	TO-220NI
包装说明：	FLANGE MOUNT, R-PSFM-T	Reach Compliance Code：	unknown
风险等级：	5.82	最小漏源击穿电压：	500 V
最大漏极电流 (ID)：	8 A	最大漏源导通电阻：	0.85 Ω
FET 技术：	METAL-OXIDE SEMICONDUCTOR	JESD-30 代码：	R-PSFM-T
工作模式：	ENHANCEMENT MODE	封装主体材料：	PLASTIC/EPOXY
封装形状：	RECTANGULAR	封装形式：	FLANGE MOUNT
极性/信道类型：	N-CHANNEL	认证状态：	Not Qualified
表面贴装：	NO	端子形式：	THROUGH-HOLE
端子位置：	SINGLE	晶体管元件材料：	SILICON
Base Number Matches：	1

2SK4105 数据手册

2SK4105

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSVI)

2SK4105

Switching Regulator Applications

Unit: mm

•

Low drain-source ON resistance: R

= 0.75 Ω (typ.)

DS (ON)

High forward transfer admittance: |Y | = 6.5 S (typ.)

Low leakage current: I

= 100 μA (max) (V

= 500 V)

DSS

Enhancement mode: V = 2.0 to 4.0 V (V

= 10 V, I = 1 mA)

Absolute Maximum Ratings (Ta = 25°C)

Characteristics

Drain-source voltage

Symbol

Rating

Unit

500

±30

DSS

Drain-gate voltage (R

Gate-source voltage

= 20 kΩ)

DGR

GSS

(Note 1)

Drain current

Pulse (t = 1 ms)

(Note 1)

JEDEC

JEITA

―

Drain power dissipation (Tc = 25°C)

SC-67

2-10R1B

Single pulse avalanche energy

312

TOSHIBA

(Note 2)

Avalanche current

Weight: 1.9 g (typ.)

Repetitive avalanche energy (Note 3)

Channel temperature

°C

150

Storage temperature range

-55 to 150

stg

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.

operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate

reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and

Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).

Thermal Characteristics

Characteristics

Symbol

Max

Unit

Thermal resistance, channel to case

Thermal resistance, channel to ambient

3.125

62.5

°C/W

th (ch-c)

th (ch-a)

Note 1: Ensure that the channel temperature does not exceed 150℃.

Note 2: = 90 V, T = 25°C(initial), L = 8.3 mH, I = 8 A, R = 25 Ω

Note 3: Repetitive rating: pulse width limited by maximum channel temperature

This transistor is an electrostatic-sensitive device. Please handle with caution.

2009-09-29

12 3 4 5 6

中文翻译

下载PDF

与2SK4105相关器件

型号	品牌	获取价格	描述	数据表
2SK4107	TOSHIBA	获取价格	Switching Regulator Applications
2SK4107(F)	TOSHIBA	获取价格	2SK4107(F)
2SK4107_09	TOSHIBA	获取价格	Switching Regulator Applications
2SK4108	TOSHIBA	获取价格	Silicon N-Channel MOS Type Switching Regulator Applications
2SK4108(F,T)	TOSHIBA	获取价格	MOSFET N-CH 500V 20A SC-67
2SK4110	TOSHIBA	获取价格	TRANSISTOR 6 A, 600 V, 1.25 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220NIS, 3 PIN, FET Gener
2SK4111	TOSHIBA	获取价格	TRANSISTOR 10 A, 600 V, 0.75 ohm, N-CHANNEL, Si, POWER, MOSFET, LEAD FREE, 2-10R1B, SC-67,
2SK4112	TOSHIBA	获取价格	TRANSISTOR 10 A, 600 V, 1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220NIS, 3 PIN, FET General
2SK4113	TOSHIBA	获取价格	TRANSISTOR 5 A, 900 V, 2.5 ohm, N-CHANNEL, Si, POWER, MOSFET, SC-67, 3 PIN, FET General Pu
2SK4114	TOSHIBA	获取价格	TRANSISTOR 5 A, 900 V, 2.5 ohm, N-CHANNEL, Si, POWER, MOSFET, SC-67, 3 PIN, FET General Pu

与2SK4105相关文章

塔塔电子与力积电达成技术转让协议，携手建设印度首座晶圆厂
2024-09-29

24
英特尔震撼发布：128核心256线程的至强6性能核处理器
2024-09-29

21
SK海力士量产12层HBM3E，容量高达36GB
2024-09-27

20
意法半导体传感器驱动Sphere，开启沉浸式电影新时代
2024-09-27

32

产品中心

服务支持

精选活动

关于我们

帮助中心

2SK4105

2SK4105 技术参数

2SK4105 数据手册

与2SK4105相关器件

与2SK4105相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

2SK4105

2SK4105 技术参数

2SK4105 数据手册

与2SK4105相关器件

与2SK4105相关文章

您还可以找

您在本页遇到什么问题？