Datasheet > 2SK4105

2SK4105

更新时间： 2024-11-16 14:46:23

品牌	Logo	应用领域
东芝 - TOSHIBA		局域网晶体管
页数	文件大小	规格书
6页	212K
描述
TRANSISTOR 8 A, 500 V, 0.85 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220NIS, FET General Purpose Power

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2SK4105 技术参数

生命周期：	Obsolete	零件包装代码：	TO-220NI
包装说明：	FLANGE MOUNT, R-PSFM-T	Reach Compliance Code：	unknown
风险等级：	5.82	最小漏源击穿电压：	500 V
最大漏极电流 (ID)：	8 A	最大漏源导通电阻：	0.85 Ω
FET 技术：	METAL-OXIDE SEMICONDUCTOR	JESD-30 代码：	R-PSFM-T
工作模式：	ENHANCEMENT MODE	封装主体材料：	PLASTIC/EPOXY
封装形状：	RECTANGULAR	封装形式：	FLANGE MOUNT
极性/信道类型：	N-CHANNEL	认证状态：	Not Qualified
表面贴装：	NO	端子形式：	THROUGH-HOLE
端子位置：	SINGLE	晶体管元件材料：	SILICON
Base Number Matches：	1

2SK4105 数据手册

2SK4105

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSVI)

2SK4105

Switching Regulator Applications

Unit: mm

•

Low drain-source ON resistance: R

= 0.75 Ω (typ.)

DS (ON)

High forward transfer admittance: |Y | = 6.5 S (typ.)

Low leakage current: I

= 100 μA (max) (V

= 500 V)

DSS

Enhancement mode: V = 2.0 to 4.0 V (V

= 10 V, I = 1 mA)

Absolute Maximum Ratings (Ta = 25°C)

Characteristics

Drain-source voltage

Symbol

Rating

Unit

500

±30

DSS

Drain-gate voltage (R

Gate-source voltage

= 20 kΩ)

DGR

GSS

(Note 1)

Drain current

Pulse (t = 1 ms)

(Note 1)

JEDEC

JEITA

―

Drain power dissipation (Tc = 25°C)

SC-67

2-10R1B

Single pulse avalanche energy

312

TOSHIBA

(Note 2)

Avalanche current

Weight: 1.9 g (typ.)

Repetitive avalanche energy (Note 3)

Channel temperature

°C

150

Storage temperature range

-55 to 150

stg

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.

operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate

reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and

Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).

Thermal Characteristics

Characteristics

Symbol

Max

Unit

Thermal resistance, channel to case

Thermal resistance, channel to ambient

3.125

62.5

°C/W

th (ch-c)

th (ch-a)

Note 1: Ensure that the channel temperature does not exceed 150℃.

Note 2: = 90 V, T = 25°C(initial), L = 8.3 mH, I = 8 A, R = 25 Ω

Note 3: Repetitive rating: pulse width limited by maximum channel temperature

This transistor is an electrostatic-sensitive device. Please handle with caution.

2009-09-29

12 3 4 5 6

中文翻译

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2SK4112	TOSHIBA	获取价格	TRANSISTOR 10 A, 600 V, 1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220NIS, 3 PIN, FET General
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2SK4114	TOSHIBA	获取价格	TRANSISTOR 5 A, 900 V, 2.5 ohm, N-CHANNEL, Si, POWER, MOSFET, SC-67, 3 PIN, FET General Pu

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