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2SK3434-Z PDF预览

2SK3434-Z

更新时间: 2024-11-17 22:52:59
品牌 Logo 应用领域
日电电子 - NEC 开关
页数 文件大小 规格书
4页 51K
描述
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

2SK3434-Z 数据手册

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PRELIMINARY DATA SHEET  
MOS FIELD EFFECT TRANSISTOR  
2SK3434  
SWITCHING  
N-CHANNEL POWER MOS FET  
INDUSTRIAL USE  
DESCRIPTION  
ORDERING INFORMATION  
PART NUMBER  
2SK3434  
The 2SK3434 is N-channel MOS Field Effect Transistor  
designed for high current switching applications.  
PACKAGE  
TO-220AB  
TO-262  
2SK3434-S  
FEATURES  
2SK3434-Z  
TO-220SMD  
Super low on-state resistance:  
DS(on)1  
GS  
D
R
R
= 20 mMAX. (V = 10 V, I = 24 A)  
(TO-220AB)  
DS(on)2  
= 31 mMAX. (V = 4.0 V, I = 24 A)  
GS  
D
iss  
iss  
Low C : C = 2100 pF TYP.  
Built-in gate protection diode  
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)  
Drain to Source Voltage  
VDSS  
VGSS  
ID(DC)  
ID(pulse)  
PT  
60  
±20  
V
V
Gate to Source Voltage  
Drain Current (DC)  
±48  
A
(TO-262)  
Drain Current (pulse) Note1  
Total Power Dissipation (TC = 25°C)  
Total Power Dissipation (TA = 25°C)  
Channel Temperature  
±192  
56  
A
W
W
°C  
°C  
A
PT  
1.5  
Tch  
150  
Storage Temperature  
Tstg  
–55 to +150  
28  
Single Avalanche Current Note2  
Single Avalanche Energy Note2  
IAS  
EAS  
78  
mJ  
Notes 1. PW 10 µs, Duty cycle 1 %  
(TO-220SMD)  
2. Starting Tch = 25 °C, RG = 25 Ω, VGS = 20 V 0 V  
THERMAL RESISTANCE  
Channel to Case  
Rth(ch-C)  
Rth(ch-A)  
2.23  
83.3  
°C/W  
°C/W  
Channel to Ambient  
The information in this document is subject to change without notice. Before using this document, please  
confirm that this is the latest version.  
Not all devices/types available in every country. Please check with local NEC representative for  
availability and additional information.  
The mark shows major revised points.  
Document No.  
Date Published March 2000 NS CP(K)  
Printed in Japan  
D14603EJ1V0DS00 (1st edition)  
1999, 2000  
©

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