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2SK3435

更新时间: 2024-11-18 06:23:27
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描述
MOS Field Effect Transistor

2SK3435 数据手册

  
SMD Type  
MOSFET  
MOS Field Effect Transistor  
2SK3435  
TO-263  
Unit: mm  
Features  
+0.2  
4.57  
-0.2  
+0.1  
1.27  
-0.1  
Super low on-state resistance:  
RDS(on)1 = 14m MAX. (VGS = 10 V, ID = 40A)  
RDS(on)2 =22 m MAX. (VGS = 4 V, ID = 40A)  
Low Ciss: Ciss =3200 pF TYP.  
+0.1  
-0.1  
0.1max  
1.27  
Built-in gate protection diode  
+0.1  
0.81  
-0.1  
2.54  
1 Gate  
+0.2  
2.54  
-0.2  
+0.1  
5.08  
-0.1  
+0.2  
0.4  
-0.2  
2 Drain  
3 Source  
Absolute Maximum Ratings Ta = 25  
Parameter  
Drain to source voltage  
Symbol  
VDSS  
VGSS  
ID  
Rating  
Unit  
V
60  
Gate to source voltage  
V
20  
A
80  
320  
Drain current  
Idp *  
A
84  
Power dissipation  
TC=25  
TA=25  
PD  
W
1.5  
Channel temperature  
Storage temperature  
Tch  
150  
Tstg  
-55 to +150  
* PW 10 s,Duty Cycle 1%  
Electrical Characteristics Ta = 25  
Parameter  
Drain cut-off current  
Gate leakage current  
Gat cutoff voltage  
Symbol  
IDSS  
IGSS  
VGS(off)  
Yfs  
Testconditons  
Min  
Typ  
Max  
10  
Unit  
A
VDS=60V,VGS=0  
VGS= 20V,VDS=0  
VDS=10V,ID=1mA  
VDS=10V,ID=40A  
VGS=10V,ID=40A  
VGS=4V,ID=40A  
10  
A
1.5  
21  
2.0  
43  
2.5  
V
Forward transfer admittance  
S
RDS(on)1  
RDS(on)2  
Ciss  
11  
14  
22  
m
Drain to source on-state resistance  
16  
m
Input capacitance  
Output capacitance  
Reverse transfer capacitance  
Turn-on delay time  
Rise time  
3200  
520  
260  
80  
pF  
pF  
pF  
ns  
ns  
ns  
ns  
nC  
nC  
nC  
VDS=10V,VGS=0,f=1MHZ  
Coss  
Crss  
ton  
tr  
1200  
200  
350  
60  
ID=40A,VGS(on)=10V,RG=10 ,VDD=30V  
Turn-off delay time  
Fall time  
toff  
tf  
Total Gate Charge  
Gate to Source Charge  
Gate to Drain Charge  
QG  
ID =80A, VDD =48V, VGS = 10 V  
QGS  
QGD  
10  
16  
1
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