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2SK3434-ZJ PDF预览

2SK3434-ZJ

更新时间: 2024-11-17 23:20:39
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其他 - ETC 晶体晶体管开关脉冲
页数 文件大小 规格书
8页 81K
描述
TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 48A I(D) | TO-263AB

2SK3434-ZJ 数据手册

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DATA SHEET  
MOS FIELD EFFECT TRANSISTOR  
2SK3434  
SWITCHING  
N-CHANNEL POWER MOS FET  
INDUSTRIAL USE  
ORDERING INFORMATION  
DESCRIPTION  
PART NUMBER  
2SK3434  
PACKAGE  
TO-220AB  
TO-262  
The 2SK3434 is N-channel MOS Field Effect Transistor  
designed for high current switching applications.  
2SK3434-S  
2SK3434-ZJ  
2SK3434-Z  
FEATURES  
TO-263  
Super low on-state resistance  
RDS(on)1 = 20 mMAX. (VGS = 10 V, ID = 24 A)  
RDS(on)2 = 31 mMAX. (VGS = 4.0 V, ID = 24 A)  
Low Ciss: Ciss = 2100 pF TYP.  
Built-in gate protection diode  
TO-220SMDNote  
Note TO-220SMD package is produced only  
in Japan.  
(TO-220AB)  
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)  
Drain to Source Voltage  
VDSS  
VGSS  
ID(DC)  
ID(pulse)  
PT  
60  
±20  
V
V
Gate to Source Voltage  
Drain Current (DC)  
±48  
A
Drain Current (pulse) Note1  
Total Power Dissipation (TC = 25°C)  
Total Power Dissipation (TA = 25°C)  
Channel Temperature  
±120  
56  
A
W
PT  
1.5  
W
°C  
°C  
A
(TO-262)  
Tch  
150  
Storage Temperature  
Tstg  
IAS  
–55 to +150  
28  
Single Avalanche Current Note2  
Single Avalanche Energy Note2  
EAS  
78  
mJ  
Notes 1. PW 10 µs, Duty cycle 1%  
2. Starting Tch = 25°C, RG = 25 Ω, VGS = 20 0 V  
(TO-263,TO-220SMD)  
The information in this document is subject to change without notice. Before using this document, please  
confirm that this is the latest version.  
Not all devices/types available in every country. Please check with local NEC representative for  
availability and additional information.  
Document No.  
Date Published March 2001 NS CP(K)  
Printed in Japan  
D14603EJ2V0DS00 (2nd edition)  
The mark shows major revised points.  
1999, 2001  
©

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