Datasheet > 2SK3147(L)-2

2SK3147(L)-2

更新时间： 2024-09-15 15:25:15

品牌	Logo	应用领域
瑞萨 - RENESAS		/
页数	文件大小	规格书
14页	77K
描述
TRANSISTOR,MOSFET,N-CHANNEL,100V V(BR)DSS,5A I(D),TO-251VAR

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2SK3147(L)-2 技术参数

To all our customers

Regarding the change of names mentioned in the document, such as Hitachi

Electric and Hitachi XX, to Renesas Technology Corp.

The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas

Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog

and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.)

Accordingly, although Hitachi, Hitachi, Ltd., Hitachi Semiconductors, and other Hitachi brand

names are mentioned in the document, these names have in fact all been changed to Renesas

Technology Corp. Thank you for your understanding. Except for our corporate trademark, logo and

corporate statement, no changes whatsoever have been made to the contents of the document, and

these changes do not constitute any alteration to the contents of the document itself.

Renesas Technology Home Page: http://www.renesas.com

Renesas Technology Corp.

Customer Support Dept.

April 1, 2003

12 3 4 5 6 7...14

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型号	品牌	获取价格	描述	数据表
2SK3147(S)	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 100V V(BR)DSS \| 5A I(D) \| TO-252AA
2SK3147(S)-1	RENESAS	获取价格	TRANSISTOR,MOSFET,N-CHANNEL,100V V(BR)DSS,5A I(D),TO-252VAR
2SK3147(S)-2	HITACHI	获取价格	Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,
2SK3147(S)-3	HITACHI	获取价格	Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,
2SK3147(S)-3	RENESAS	获取价格	TRANSISTOR,MOSFET,N-CHANNEL,100V V(BR)DSS,5A I(D),TO-252VAR
2SK3147L	HITACHI	获取价格	Silicon N Channel MOS FET High Speed Power Switching
2SK3147L-E	RENESAS	获取价格	Silicon N Channel MOS FET High Speed Power Switching
2SK3147S	KEXIN	获取价格	Silicon N Cannel MOSFET
2SK3147S	HITACHI	获取价格	Silicon N Channel MOS FET High Speed Power Switching
2SK3147S	TYSEMI	获取价格	Low on-resistance RDS = 0.1 typ. 4 V gate drive device can be driven from 5 V source