Datasheet > 2SK3076(S)

2SK3076(S)

更新时间： 2024-11-05 21:16:11

品牌	Logo	应用领域
日立 - HITACHI		/
页数	文件大小	规格书
9页	52K
描述
Power Field-Effect Transistor, 0.9ohm, LDPAK-3

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2SK3076(S) 数据手册

2SK3076(L),2SK3076(S)

Silicon N Channel MOS FET

High Speed Power Switching

ADE-208-656 (Z)

1st. Edition

Jun 1998

Features

•

Low on-resistance

High speed switching

Low drive current.

Built-in fast recovery diode (trr=120 ns)

Outline

LDPAK

1. Gate

2. Drain

3. Source

4. Drain

12 3 4 5 6 7...9

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型号	品牌	获取价格	描述	数据表
2SK3076L	HITACHI	获取价格	Silicon N Channel MOS FET High Speed Power Switching
2SK3076S	HITACHI	获取价格	Silicon N Channel MOS FET High Speed Power Switching
2SK3077	TOSHIBA	获取价格	900 MHz BAND AMPLIFIER APPLICATIONS
2SK3077_07	TOSHIBA	获取价格	SILICON N CHANNEL MOS TYPE 900 MHz BAND AMPLIFIER APPLICATIONS (GSM)
2SK3077A	TOSHIBA	获取价格	VHF/UHF Band Amplifier Applications
2SK3078	TOSHIBA	获取价格	900 MHz BAND AMPLIFIER APPLICATIONS (GSM)
2SK3078A	TOSHIBA	获取价格	TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
2SK3078A(TE12L,F)	TOSHIBA	获取价格	RF Small Signal Field-Effect Transistor
2SK3078A_07	TOSHIBA	获取价格	Silicon N Channel MOS Type VHF/UHF Band Amplifier Applications
2SK3078AG-AB3-R	UTC	获取价格	Small Signal Field-Effect Transistor,