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2SK3051_06

更新时间： 2024-11-18 04:26:31
品牌 Logo 应用领域
东芝 - TOSHIBA 转换器稳压器电机驱动DC-DC转换器
页数 文件大小 规格书
3页 179K
描述
Silicon N Channel MOS Type Chopper Regulator DC−DC Converter, and Motor Drive Applications

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2SK3051_06 数据手册

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2SK3051  
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV)  
2SK3051  
Chopper Regulator DC−DC Converter, and Motor Drive  
Applications  
Unit: mm  
z Low drain−source ON resistance  
z High forward transfer admittance  
: R  
= 24 mΩ (typ.)  
DS (ON)  
: |Y | = 27 S (typ.)  
fs  
z Low leakage current  
z Enhancement mode  
: I  
= 100 μA (max) (V  
= 50 V)  
DSS  
DS  
: V = 1.5~3.0 V (V  
= 10 V, I = 1 mA)  
D
th  
DS  
Absolute Maximum Ratings (Ta = 25°C)  
Characteristics  
Drain−source voltage  
Symbol  
Rating  
Unit  
V
50  
50  
V
V
DSS  
Drain−gate voltage (R  
Gate−source voltage  
= 20 kΩ)  
V
GS  
DGR  
V
±20  
45  
V
GSS  
DC (Note 1)  
Pulse (Note 1)  
I
A
D
Drain current  
I
135  
40  
A
DP  
Drain power dissipation (Tc = 25°C)  
P
W
D
AS  
AR  
JEDEC  
JEITA  
―
―
Single pulse avalanche energy  
E
115  
mJ  
(Note 2)  
Avalanche current  
I
45  
4
A
TOSHIBA  
2-10S1B  
Repetitive avalanche energy (Note 3)  
Channel temperature  
E
mJ  
°C  
°C  
AR  
Weight: 1.5 g (typ.)  
T
ch  
150  
Storage temperature range  
T
−55~150  
stg  
Note: Using continuously under heavy loads (e.g. the application of high  
temperature/current/voltage and the significant change in temperature, etc.)  
may cause this product to decrease in the reliability significantly even if the  
operating conditions (i.e. operating temperature/current/voltage, etc.) are  
within the absolute maximum ratings. Please design the appropriate reliability  
upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling  
Precautions”/Derating Concept and Methods) and individual reliability data (i.e.  
reliability test report and estimated failure rate, etc).  
Thermal Characteristics  
Characteristics  
Symbol  
Max  
3.125  
83.3  
Unit  
Thermal resistance, channel to case  
R
°C / W  
°C / W  
th (ch−c)  
th (ch−a)  
Thermal resistance, channel to  
ambient  
JEDEC  
JEITA  
―
―
R
Note 1: Ensure that the channel temperature does not exceed 150°C.  
Note 2: = 25 V, T = 25°C (initial), L = 71 μH, R = 25 Ω, I = 45 A  
TOSHIBA  
2-10S2B  
V
DD  
ch  
G
AR  
Weight: 1.5 g (typ.)  
Note 3: Repetitive rating;: pulse width limited by maximum channel  
temperature.  
This transistor is an electrostatic-sensitive device.  
Please handle with caution.  
1
2006-11-17  
123

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