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2SK3056

更新时间: 2024-11-19 22:52:55
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日电电子 - NEC 晶体晶体管功率场效应晶体管开关脉冲局域网
页数 文件大小 规格书
8页 70K
描述
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

2SK3056 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:TO-220AB包装说明:FLANGE MOUNT, R-PSFM-T3
针数:3Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.29.00.95
风险等级:5.31雪崩能效等级(Eas):25.6 mJ
外壳连接:DRAIN配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:60 V最大漏极电流 (ID):32 A
最大漏源导通电阻:0.05 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:TO-220ABJESD-30 代码:R-PSFM-T3
JESD-609代码:e0元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL最大脉冲漏极电流 (IDM):100 A
认证状态:Not Qualified表面贴装:NO
端子面层:TIN LEAD端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

2SK3056 数据手册

 浏览型号2SK3056的Datasheet PDF文件第2页浏览型号2SK3056的Datasheet PDF文件第3页浏览型号2SK3056的Datasheet PDF文件第4页浏览型号2SK3056的Datasheet PDF文件第5页浏览型号2SK3056的Datasheet PDF文件第6页浏览型号2SK3056的Datasheet PDF文件第7页 
DATA SHEET  
MOS FIELD EFFECT TRANSISTOR  
2SK3056  
SWITCHING  
N-CHANNEL POWER MOS FET  
INDUSTRIAL USE  
ORDERING INFORMATION  
PART NUMBER  
2SK3056  
DESCRIPTION  
This product is N-Channel MOS Field Effect Transistor  
designed for high current switching applications.  
PACKAGE  
TO-220AB  
TO-262  
2SK3056-S  
FEATURES  
Low On-State Resistance  
2SK3056-ZJ  
TO-263  
DS(on)1  
GS  
D
R
R
= 34 mMAX. (V = 10 V, I = 16 A)  
DS(on)2  
GS  
D
= 50 mMAX. (V = 4.0 V, I = 16 A)  
iss  
iss  
Low C : C = 920 pF TYP.  
Built-in Gate Protection Diode  
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)  
GS  
DSS  
V
Drain to Source Voltage (V = 0 V)  
60  
V
DS  
GSS(AC)  
Gate to Source Voltage (V = 0 V)  
V
V
±20  
+20, 10  
±32  
V
V
DS  
GSS(DC)  
Gate to Source Voltage (V = 0 V)  
D(DC)  
I
Drain Current (DC)  
A
Drain Current (Pulse) Note1  
D(pulse)  
I
±100  
34  
A
C
T
P
Total Power Dissipation (T = 25°C)  
W
W
°C  
°C  
A
A
T
P
Total Power Dissipation (T = 25°C)  
1.5  
ch  
T
Channel Temperature  
150  
stg  
Storage Temperature  
T
–55 to +150  
16  
Single Avalanche Current Note2  
Single Avalanche Energy Note2  
AS  
I
AS  
E
25.6  
mJ  
Notes 1. PW 10 µs, Duty cycle 1 %  
2. Starting Tch = 25 °C, RG = 25 Ω, VGS = 20 V 0 V  
THERMAL RESISTANCE  
th(ch-C)  
Channel to Case  
R
3.68  
83.3  
°C/W  
°C/W  
th(ch-A)  
R
Channel to Ambient  
The information in this document is subject to change without notice. Before using this document, please  
confirm that this is the latest version.  
Not all devices/types available in every country. Please check with local NEC representative for  
availability and additional information.  
Document No.  
Date Published March 1999 NS CP(K)  
Printed in Japan  
D13095EJ1V0DS00 (1st edition)  
1998,1999  
©

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