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2SK3058-S

更新时间: 2024-01-01 11:34:10
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日电电子 - NEC 开关
页数 文件大小 规格书
8页 74K
描述
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

2SK3058-S 数据手册

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DATA SHEET  
MOS FIELD EFFECT TRANSISTOR  
2SK3058  
SWITCHING  
N-CHANNEL POWER MOS FET  
INDUSTRIAL USE  
ORDERING INFORMATION  
PART NUMBER  
2SK3058  
DESCRIPTION  
This product is N-Channel MOS Field Effect Transistor  
designed for high current switching applications.  
PACKAGE  
TO-220AB  
TO-262  
2SK3058-S  
FEATURES  
Super Low On-State Resistance  
2SK3058-ZJ  
TO-263  
DS(on)1  
GS  
D
R
R
= 17 mMAX. (V = 10 V, I = 28 A)  
DS(on)2  
GS  
D
= 27 mMAX. (V = 4.0 V, I = 28 A)  
iss  
iss  
Low C : C = 2100 pF (TYP.)  
Built-in Gate Protection Diode  
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)  
GS  
DSS  
Drain to Source Voltage (V = 0)  
V
60  
V
DS  
GSS(AC)  
Gate to Source Voltage (V = 0)  
V
V
±20  
+20, –10  
±55  
V
V
DS  
GSS(DC)  
Gate to Source Voltage (V = 0)  
D(DC)  
I
Drain Current (DC)  
A
Drain Current (Pulse) Note1  
D(pulse)  
I
±165  
A
C
T
Total Power Dissipation (T = 25°C)  
P
58  
W
W
°C  
°C  
A
A
T
P
Total Power Dissipation (T = 25°C)  
1.5  
ch  
Channel Temperature  
T
150  
stg  
Storage Temperature  
T
–55 to + 150  
27.5  
Single Avalanche Current Note2  
Single Avalanche Energy Note2  
AS  
I
AS  
E
75.6  
mJ  
Notes 1. PW 10 µs, Duty cycle 1 %  
2. Starting Tch = 25 °C, R = 25 Ω, V = 20 V 0  
G
GS  
THERMAL RESISTANCE  
th(ch-C)  
Channel to Case  
R
2.16  
83.3  
°C/W  
°C/W  
th(ch-A)  
R
Channel to Ambient  
The information in this document is subject to change without notice. Before using this document, please  
confirm that this is the latest version.  
Not all devices/types available in every country. Please check with local NEC representative for  
availability and additional information.  
Document No.  
D13097EJ1V0DS00 (1st edition)  
Date Published April 1999 NS CP(K)  
Printed in Japan  
1998, 1999  
©

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