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2SK3058-Z PDF预览

2SK3058-Z

更新时间: 2024-11-17 23:20:39
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其他 - ETC 晶体晶体管
页数 文件大小 规格书
8页 79K
描述
TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 55A I(D) | TO-263ABVAR

2SK3058-Z 数据手册

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DATA SHEET  
MOS FIELD EFFECT TRANSISTOR  
2SK3058  
SWITCHING  
N-CHANNEL POWER MOS FET  
INDUSTRIAL USE  
ORDERING INFORMATION  
PART NUMBER  
2SK3058  
DESCRIPTION  
This product is N-Channel MOS Field Effect Transistor  
designed for high current switching applications.  
PACKAGE  
TO-220AB  
TO-262  
2SK3058-S  
FEATURES  
Super Low On-State Resistance  
RDS(on)1 = 17 mMAX. (VGS = 10 V, ID = 28 A)  
RDS(on)2 = 27 mMAX. (VGS = 4.0 V, ID = 28 A)  
Low Ciss : Ciss = 2100 pF (TYP.)  
Built-in Gate Protection Diode  
2SK3058-ZJ  
TO-263  
TO-220SMDNote  
2SK3058-Z  
Note TO-220SND package is produced only in  
Japan.  
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)  
(TO-220AB)  
V
Drain to Source Voltage (VGS = 0)  
Gate to Source Voltage (VDS = 0)  
Gate to Source Voltage (VDS = 0)  
Drain Current (DC)  
VDSS  
VGSS(AC)  
VGSS(DC)  
ID(DC)  
ID(pulse)  
PT  
60  
±20  
+20, –10  
±55  
V
V
A
Drain Current (Pulse) Note1  
±165  
A
Total Power Dissipation (TC = 25°C)  
Total Power Dissipation (TA = 25°C)  
Channel Temperature  
58  
W
W
°C  
°C  
A
PT  
1.5  
(TO-262)  
Tch  
150  
Storage Temperature  
Tstg  
–55 to + 150  
27.5  
Single Avalanche Current Note2  
Single Avalanche Energy Note2  
IAS  
EAS  
75.6  
mJ  
Notes 1. PW 10 µs, Duty cycle 1 %  
2. Starting Tch = 25 °C, VDD = 30 V, RG = 25 Ω, VGS = 20 V 0  
(TO-263, TO-220SMD)  
The information in this document is subject to change without notice. Before using this document, please  
confirm that this is the latest version.  
Not all devices/types available in every country. Please check with local NEC representative for  
availability and additional information.  
Document No.  
Date Published April 2001 NS CP(K)  
Printed in Japan  
D13097EJ2V0DS00 (2nd edition)  
The mark shows major revised points.  
1998, 1999  
©

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