5秒后页面跳转
捷配首页

Datasheet > 2SK3051_09
2SK3051_09 PDF预览

2SK3051_09

更新时间： 2024-11-20 07:32:27
品牌 Logo 应用领域
东芝 - TOSHIBA 驱动器转换器稳压器电机DC-DC转换器
页数 文件大小 规格书
3页 159K
描述
Chopper Regulator DC?DC Converter, and Motor Drive

阅读下载

中文翻译

获取价格

2SK3051_09 数据手册

 浏览型号2SK3051_09的Datasheet PDF文件第2页浏览型号2SK3051_09的Datasheet PDF文件第3页 
2SK3051  
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV)  
2SK3051  
Chopper Regulator DC−DC Converter, and Motor Drive  
Applications  
Unit: mm  
z Low drain−source ON resistance  
z High forward transfer admittance  
: R  
= 24 mΩ (typ.)  
DS (ON)  
: |Y | = 27 S (typ.)  
fs  
z Low leakage current  
z Enhancement mode  
: I  
= 100 μA (max) (V  
= 50 V)  
DSS  
DS  
: V = 1.5 to 3.0 V (V  
= 10 V, I = 1 mA)  
D
th  
DS  
Absolute Maximum Ratings (Ta = 25°C)  
Characteristics  
Drain−source voltage  
Symbol  
Rating  
Unit  
V
50  
50  
V
V
DSS  
Drain−gate voltage (R  
Gate−source voltage  
= 20 kΩ)  
V
GS  
DGR  
V
±20  
45  
V
GSS  
DC (Note 1)  
Pulse (Note 1)  
I
A
D
Drain current  
I
135  
40  
A
DP  
Drain power dissipation (Tc = 25°C)  
P
W
JEDEC  
JEITA  
―
―
D
AS  
AR  
Single pulse avalanche energy  
E
115  
mJ  
(Note 2)  
TOSHIBA  
2-10S1B  
Avalanche current  
I
45  
4
A
Weight: 1.5 g (typ.)  
Repetitive avalanche energy (Note 3)  
Channel temperature  
E
mJ  
°C  
°C  
AR  
T
ch  
150  
Storage temperature range  
T
−55 to 150  
stg  
Note: Using continuously under heavy loads (e.g. the application of high  
temperature/current/voltage and the significant change in temperature, etc.)  
may cause this product to decrease in the reliability significantly even if the  
operating conditions (i.e. operating temperature/current/voltage, etc.) are  
within the absolute maximum ratings. Please design the appropriate reliability  
upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling  
Precautions”/“Derating Concept and Methods”) and individual reliability data  
(i.e. reliability test report and estimated failure rate, etc).  
Thermal Characteristics  
Characteristics  
Symbol  
Max  
3.125  
83.3  
Unit  
Thermal resistance, channel to case  
R
°C / W  
°C / W  
th (ch−c)  
th (ch−a)  
JEDEC  
JEITA  
―
―
Thermal resistance, channel to  
ambient  
R
TOSHIBA  
2-10S2B  
Note 1: Ensure that the channel temperature does not exceed 150°C.  
Note 2: = 25 V, T = 25°C (initial), L = 71 μH, R = 25 Ω, I = 45 A  
Weight: 1.5 g (typ.)  
V
DD  
ch  
G
AR  
Note 3: Repetitive rating;: pulse width limited by maximum channel  
temperature.  
This transistor is an electrostatic-sensitive device.  
Please handle with caution.  
1
2009-09-29  
123

中文翻译

下载PDF

与2SK3051_09相关器件

型号 品牌 获取价格 描述 数据表
2SK3053 NEC

获取价格

 		SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
2SK3053-AZ NEC

获取价格

 		Power Field-Effect Transistor, 25A I(D), 60V, 0.07ohm, 1-Element, N-Channel, Silicon, Meta
2SK3054 NEC

获取价格

 		N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
2SK3054-A NEC

获取价格

 		Small Signal Field-Effect Transistor, 0.1A I(D), 50V, 1-Element, N-Channel, Silicon, Metal
2SK3054C-T1B-A RENESAS

获取价格

 		SMALL SIGNAL, FET
2SK3054C-T1B-AT RENESAS

获取价格

 		SMALL SIGNAL, FET
2SK3055 NEC

获取价格

 		SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
2SK3056 NEC

获取价格

 		SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
2SK3056 RENESAS

获取价格

 		暂无描述
2SK3056-AZ NEC

获取价格

 		Power Field-Effect Transistor, 32A I(D), 60V, 0.05ohm, 1-Element, N-Channel, Silicon, Meta

与2SK3051_09相关文章

您还可以找


热门产品
PCB打样/小批量
铝基板
BOM智能配单
PCBA制造
钣金
精密CNC
模具注塑
薄膜开关
精选活动
PCBA打样特惠
四六层板品质升级
铝基板品质升级
一体化电子制造
DFM下载
服务支持
企业认证
产品展示
工厂展示
工艺能力
积分商城
关于捷配
捷配简介
企业文化
公司动态
人才招聘
联系我们
帮助中心
下单流程
付款流程
开票流程
常见问题
全球PCB制造服务专线 400-613-0088

工作时间：9:00-21:00

CEO邮箱：ceo@jiepei.com

投诉邮箱：tousu@jiepei.com

捷配网-微信公众号 微信公众号
捷配网-微信公众号 抖音公众号
资质认证：
合作快递：
支付方式：
Copyright © 2024 Jiepei.com Inc. All Rights Reserved. 版权所有:杭州捷配信息科技有限公司 浙公网安备 33010502006866号 浙ICP备10014259号-119 营业执照ICP证