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2SK3053-AZ PDF预览

2SK3053-AZ

更新时间: 2024-02-08 09:26:39
品牌 Logo 应用领域
日电电子 - NEC 晶体晶体管功率场效应晶体管开关脉冲局域网
页数 文件大小 规格书
8页 70K
描述
Power Field-Effect Transistor, 25A I(D), 60V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MP-45F, ISOLATED TO-220, 3 PIN

2SK3053-AZ 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:MP-45F包装说明:,
针数:3Reach Compliance Code:compliant
风险等级:5.84配置:Single
最大漏极电流 (Abs) (ID):25 AFET 技术:METAL-OXIDE SEMICONDUCTOR
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):2 W
子类别:FET General Purpose Power表面贴装:NO
Base Number Matches:1

2SK3053-AZ 数据手册

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DATA SHEET  
MOS FIELD EFFECT TRANSISTOR  
2SK3053  
SWITCHING  
N-CHANNEL POWER MOS FET  
INDUSTRIAL USE  
ORDERING INFORMATION  
PART NUMBER  
DESCRIPTION  
The 2SK3053 is N-Channel MOS Field Effect Transistor  
designed for high current switching applications in consumer  
instruments.  
PACKAGE  
2SK3053  
Isolated TO-220  
FEATURES  
Low On-State Resistance  
RDS(on)1 = 45 mMAX. (VGS = 10 V, ID = 13 A)  
RDS(on)2 = 70 mMAX. (VGS = 4.0 V, ID = 13 A)  
Low Ciss : Ciss = 790 pF TYP.  
Built-in Gate Protection Diode  
Isolated TO-220 package  
(Isolated TO-220)  
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)  
Drain to Source Voltage  
VDSS  
VGSS(AC)  
VGSS(DC)  
ID(DC)  
ID(pulse)  
PT  
60  
±20  
V
V
Gate to Source Voltage  
Gate to Source Voltage  
+20, 10  
±25  
V
Drain Current (DC)  
A
Drain Current (Pulse) Note1  
Total Power Dissipation (TC = 25°C)  
Total Power Dissipation (TA = 25°C)  
Channel Temperature  
±75  
A
30  
W
W
°C  
°C  
A
PT  
2.0  
Tch  
150  
Storage Temperature  
Tstg  
–55 to +150  
12.5  
Single Avalanche Current Note2  
Single Avalanche Energy Note2  
IAS  
EAS  
15.6  
mJ  
Notes 1. PW 10 µs, Duty cycle 1 %  
!
2. Starting Tch = 25 °C, VDD = 30 V, RG = 25 Ω, VGS = 20 V 0 V  
The information in this document is subject to change without notice. Before using this document, please  
confirm that this is the latest version.  
Not all devices/types available in every country. Please check with local NEC representative for  
availability and additional information.  
Document No. D12912EJ3V0DS00 (3rd edition)  
Date Published May 2001 NS CP(K)  
Printed in Japan  
The mark ! shows major revised points.  
1999, 2000  
©

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