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2SK3051(TO-220SM) PDF预览

2SK3051(TO-220SM)

更新时间： 2024-11-20 14:39:27
品牌 Logo 应用领域
东芝 - TOSHIBA 开关脉冲晶体管
页数 文件大小 规格书
3页 171K
描述
TRANSISTOR 45 A, 50 V, 0.03 ohm, N-CHANNEL, Si, POWER, MOSFET, 2-10S2B, TO-220SM, 3 PIN, FET General Purpose Power

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2SK3051(TO-220SM) 技术参数

是否无铅： 含铅是否Rohs认证： 不符合
生命周期：End Of Life零件包装代码：TO-220SM
包装说明：SMALL OUTLINE, R-PSSO-G2针数：3
Reach Compliance Code：unknownECCN代码：EAR99
风险等级：5.77雪崩能效等级（Eas）：115 mJ
外壳连接：DRAIN配置：SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压：50 V最大漏极电流 (ID)：45 A
最大漏源导通电阻：0.03 ΩFET 技术：METAL-OXIDE SEMICONDUCTOR
JESD-30 代码：R-PSSO-G2元件数量：1
端子数量：2工作模式：ENHANCEMENT MODE
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：SMALL OUTLINE峰值回流温度（摄氏度）：NOT SPECIFIED
极性/信道类型：N-CHANNEL最大脉冲漏极电流 (IDM)：135 A
认证状态：Not Qualified表面贴装：YES
端子形式：GULL WING端子位置：SINGLE
处于峰值回流温度下的最长时间：NOT SPECIFIED晶体管应用：SWITCHING
晶体管元件材料：SILICONBase Number Matches：1

2SK3051(TO-220SM) 数据手册

 浏览型号2SK3051(TO-220SM)的Datasheet PDF文件第2页浏览型号2SK3051(TO-220SM)的Datasheet PDF文件第3页 
2SK3051  
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV)  
2SK3051  
Chopper Regulator DC−DC Converter, and Motor Drive  
Applications  
Unit: mm  
z Low drain−source ON resistance  
z High forward transfer admittance  
: R  
= 24 mΩ (typ.)  
DS (ON)  
: |Y | = 27 S (typ.)  
fs  
z Low leakage current  
z Enhancement mode  
: I  
= 100 μA (max) (V  
= 50 V)  
DSS  
DS  
: V = 1.5 to 3.0 V (V  
= 10 V, I = 1 mA)  
D
th  
DS  
Absolute Maximum Ratings (Ta = 25°C)  
Characteristics  
Drain−source voltage  
Symbol  
Rating  
Unit  
V
50  
50  
V
V
DSS  
Drain−gate voltage (R  
Gate−source voltage  
= 20 kΩ)  
V
GS  
DGR  
V
±20  
45  
V
GSS  
DC (Note 1)  
Pulse (Note 1)  
I
A
D
Drain current  
I
135  
40  
A
DP  
Drain power dissipation (Tc = 25°C)  
P
W
JEDEC  
JEITA  
―
―
D
AS  
AR  
Single pulse avalanche energy  
E
115  
mJ  
(Note 2)  
TOSHIBA  
2-10S1B  
Avalanche current  
I
45  
4
A
Weight: 1.5 g (typ.)  
Repetitive avalanche energy (Note 3)  
Channel temperature  
E
mJ  
°C  
°C  
AR  
T
ch  
150  
Storage temperature range  
T
−55 to 150  
stg  
Note: Using continuously under heavy loads (e.g. the application of high  
temperature/current/voltage and the significant change in temperature, etc.)  
may cause this product to decrease in the reliability significantly even if the  
operating conditions (i.e. operating temperature/current/voltage, etc.) are  
within the absolute maximum ratings. Please design the appropriate reliability  
upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling  
Precautions”/“Derating Concept and Methods”) and individual reliability data  
(i.e. reliability test report and estimated failure rate, etc).  
Thermal Characteristics  
Characteristics  
Symbol  
Max  
3.125  
83.3  
Unit  
Thermal resistance, channel to case  
R
°C / W  
°C / W  
th (ch−c)  
th (ch−a)  
JEDEC  
JEITA  
―
―
Thermal resistance, channel to  
ambient  
R
TOSHIBA  
2-10S2B  
Note 1: Ensure that the channel temperature does not exceed 150°C.  
Note 2: = 25 V, T = 25°C (initial), L = 71 μH, R = 25 Ω, I = 45 A  
Weight: 1.5 g (typ.)  
V
DD  
ch  
G
AR  
Note 3: Repetitive rating;: pulse width limited by maximum channel  
temperature.  
This transistor is an electrostatic-sensitive device.  
Please handle with caution.  
1
2009-09-29  
123

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