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2SK3050

更新时间: 2024-11-18 06:23:23
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描述
Small Switching

2SK3050 数据手册

  
SMD Type  
Transistors  
Small Switching  
2SK3050  
TO-252  
Unit: mm  
+0.15  
-0.15  
Features  
+0.1  
2.30  
-0.1  
6.50  
+0.2  
5.30  
-0.2  
+0.8  
0.50  
-0.7  
Low on-resistance.  
Fast switching speed.  
Wide SOA (safe operating area).  
0.127  
max  
+0.1  
0.80  
-0.1  
Gate-source voltage (VGSS) guaranteed to be 30V.  
Easily designed drive circuits.  
+0.1  
0.60  
-0.1  
1. Gate  
Easy to use in parallel.  
2.3  
4.60  
+0.15  
-0.15  
2. Drain  
3. Source  
Silicon N-channel MOSFET  
Absolute Maximum Ratings Ta = 25  
Parameter  
Drain to Source Voltage  
Symbol  
VDSS  
VGSS  
ID  
Rating  
600  
30  
2
Unit  
V
Gate to Source Voltage  
V
Drain Current(DC)  
A
Drain Current (pulse) *  
IDP  
6
A
Body to drain diode reverse drain current  
Body to drain diode reverse drain current(pulse) *  
IDR  
2
A
IDRP  
PD  
6
A
20  
150  
W
Total power dissipation (Tc=25  
Channel Temperature  
)
Tch  
Tstg  
Storage temperature  
-55 to +150  
* PW 10ìs,Dduty cycle 1%.  
Electrical Characteristics Ta = 25  
Parameter  
Symbol  
IGSS  
V(BR)DSS ID=1mA, VGS=0V  
IDSS VDS=600V, VGS=0V  
Testconditons  
Min  
600  
2.0  
0.5  
Typ  
Max  
100  
Unit  
Gate to source leak current  
Drain to source breakdown voltage  
Zero gate voltage drain current  
Gate threshold voltage  
Static Drain to source on stateresistance  
Forward transfer admittance  
Input capacitance  
nA  
V
VGS= 30V, VDS=0V  
100  
4.0  
5.5  
A
VGSth VDS=10V, ID=1mA  
RDS(on) ID=1A, VGS=10V  
V
4.4  
1.0  
280  
48  
|yfs|  
Ciss  
Coss  
Crss  
td(on)  
tr  
ID=1A, VDS=10V  
VDS=10V  
S
pF  
pF  
pF  
ns  
ns  
ns  
ns  
ns  
Output capacitance  
VGS=0V  
Reverse transfer capacitance  
Turn-on delay time  
f=1MHz  
16  
VGS=10V  
12  
Rise time  
17  
RL=300  
Turn-off delay time  
td(off)  
tf  
29  
RG=10  
Fall time  
ID=1A, VDD=300V  
IDR=2A, VGS=0V  
105  
460  
2.0  
Reverse recovery time  
Reverse recovery charge  
trr  
Qrr  
di/dt=100A/  
s
C
1
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