Datasheet > 2SK3050_1

2SK3050_1

更新时间： 2024-01-21 04:28:40

品牌	Logo	应用领域
罗姆 - ROHM		驱动
页数	文件大小	规格书
6页	103K
描述
10V Drive Nch MOS FET

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中文翻译

获取价格

数据手册

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2SK3050_1 数据手册

2SK3050

Transistors

10V Drive Nch MOS FET

2SK3050

zExternal dimensions (Unit : mm)

zStructure

Silicon N-channel MOSFET

CPT3

6.5

5.1

2.3

0.5

zFeatures

1) Low on-resistance.

2) Fast switching speed.

3) Wide SOA (safe operating area).

4) Gate-source voltage (V^GSS)

guaranteed to be ±30V.

5) Drive circuits can be simple.

6) Parallel use is easy.

0.75

0.65

2.3

0.9

(1)

2.3

(1)Gate

(3)

(2)

0.5

1.0

(2)Drain

(3)Source

Abbreviated symbol : K3050

zApplications

Switching

zPackaging specifications

zInner circuit

Package

Taping

Drain

Code

Type Basic ordering unit (pieces)

2SK3050

2500

Gate

∗1

zAbsolute maximum ratings (Ta=25°C)

Parameter

Drain-source voltage

Gate-source voltage

Limits

Symbol

Unit

600

DSS

GSS

Source

∗1 BODY DIODE

Continuous

Pulsed

Drain current

∗1

DRP

Continuous

Pulsed

Reverse drain

current

Continuous

Pulsed

Source current

(Body Diode)

∗1

∗2

Avalanche Current

Avalanche Energy

EAS

°C

Total power dissipation (Tc=25°C)

Channel temperature

150

Tch

Storage temperature

−55 to +150

Tstg

∗1 Pw≤10µs, Duty cycle≤1%

∗2 L 10mH, V^DD=50V, RG=25Ω, 1Pulse, Tch=25°C

zThermal resistance

Parameter

Channel to case

Symbol

Limits

6.25

Unit

Rth(ch-c)

°C/W

Rev.A

1/5

12 3 4 5 6

中文翻译

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