生命周期: | Obsolete | 零件包装代码: | TO-92 |
包装说明: | SC-51, TO-92MOD, 3 PIN | 针数: | 3 |
Reach Compliance Code: | compliant | ECCN代码: | EAR99 |
风险等级: | 5.73 | 配置: | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压: | 60 V | 最大漏极电流 (ID): | 5 A |
最大漏源导通电阻: | 0.1 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JEDEC-95代码: | TO-92 | JESD-30 代码: | O-PBCY-T3 |
元件数量: | 1 | 端子数量: | 3 |
工作模式: | ENHANCEMENT MODE | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | ROUND | 封装形式: | CYLINDRICAL |
极性/信道类型: | N-CHANNEL | 认证状态: | Not Qualified |
表面贴装: | NO | 端子形式: | THROUGH-HOLE |
端子位置: | BOTTOM | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2SK2854 | TOSHIBA |
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N CHANNEL MOS TYPE (UHF BAND AMPLIFIER APPLICATIONS) | |
2SK2854_07 | TOSHIBA |
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FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE UHF BAND AMPLIFIER APPLICATION | |
2SK2855 | TOSHIBA |
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N CHANNEL MOS TYPE (UHF BAND AMPLIFIER APPLICATION) | |
2SK2855_07 | TOSHIBA |
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FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE UHF BAND AMPLIFIER APPLICATION | |
2SK2856 | TOSHIBA |
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N CHANNEL SINGLE GATE MODULATION DOPE TYPE (UHF BAND LOW NOISE AMPLIFIER APPLICATIONS) | |
2SK2857 | NEC |
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N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING | |
2SK2857 | KEXIN |
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MOS Field Effect Transistor | |
2SK2857 | TYSEMI |
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Can be driven by a 5V power source. Low On-state resistance : RDS(on)1 = 220 m MAX | |
2SK2857-AZ | NEC |
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Small Signal Field-Effect Transistor, 4A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-o | |
2SK2857C | RENESAS |
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N-CHANNEL MOSFET FOR SWITCHING |