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2SK2857 PDF预览

2SK2857

更新时间: 2024-11-17 07:32:23
品牌 Logo 应用领域
科信 - KEXIN /
页数 文件大小 规格书
1页 45K
描述
MOS Field Effect Transistor

2SK2857 数据手册

  
SMD Type  
MOSFET  
MOS Field Effect Transistor  
2SK2857  
SOT-89  
Unit: mm  
+0.1  
-0.1  
+0.1  
1.50  
-0.1  
4.50  
1.80  
Features  
+0.1  
-0.1  
Can be driven by a 5V power source.  
Low On-state resistance :  
RDS(on)1 = 220 m MAX. (VGS = 4 V, ID = 1.5 A)  
RDS(on)2 = 150 m MAX. (VGS = 10 V, ID = 2.5 A)  
3
0.53  
2
1
+0.1  
0.48  
-0.1  
+0.1  
-0.1  
+0.1  
0.44  
-0.1  
1 Gate  
+0.1  
-0.1  
3.00  
2 Drain  
3 Source  
Absolute Maximum Ratings Ta = 25  
Parameter  
Drain to source voltage  
Symbol  
VDSS  
VGSS  
ID  
Rating  
Unit  
V
60  
Gate to source voltage  
V
20  
A
4
Drain current  
Idp *  
PD  
A
16  
2
Power dissipation  
W
Channel temperature  
Storage temperature  
* PW 10 s,Duty Cycle 1%  
Tch  
150  
Tstg  
-55 to +150  
Electrical Characteristics Ta = 25  
Parameter  
Symbol  
IDSS  
IGSS  
VGS(off) VDS=10V,ID=1mA  
Testconditons  
Min  
Typ  
Max  
10  
Unit  
A
Drain cut-off current  
VDS=60V,VGS=0  
Gate leakage current  
VGS= 20V,VDS=0  
10  
A
Gate to source cutoff voltage  
Forward transfer admittance  
1.0  
1
11.4  
2.0  
V
VDS=10V,ID=2A  
VGS=4V,ID=1.5A  
VGS=10V,ID=2.5A  
S
Yfs  
150  
110  
265  
125  
56  
220  
150  
m
Drain to source on-state resistance  
RDS(on)  
m
Input capacitance  
Output capacitance  
Reverse transfer capacitance  
Turn-on delay time  
Rise time  
Ciss  
Coss  
Crss  
ton  
tr  
pF  
pF  
pF  
ns  
ns  
ns  
ns  
VDS=10V,VGS=0,f=1MHZ  
8
11  
ID=1A,VGS(on)=10V,RL=25 ,RG=10  
,VDD=25V  
Turn-off delay time  
Fall time  
toff  
tf  
52  
22  
Marking  
Marking  
NX  
1
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