Datasheet > 2SK2857

2SK2857

更新时间： 2024-01-31 21:19:41

品牌	Logo	应用领域
日电电子 - NEC		晶体开关晶体管场效应晶体管
页数	文件大小	规格书
8页	64K
描述
N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING

阅读下载

中文翻译

获取价格

技术参数
数据手册

如果您发现信息不准确，欢迎纠错

2SK2857 技术参数

生命周期：	Transferred	包装说明：	SMALL OUTLINE, R-PSSO-F3
Reach Compliance Code：	unknown	ECCN代码：	EAR99
风险等级：	5.34	其他特性：	ESD PROTECTED
外壳连接：	DRAIN	配置：	SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压：	60 V	最大漏极电流 (ID)：	4 A
最大漏源导通电阻：	0.15 Ω	FET 技术：	METAL-OXIDE SEMICONDUCTOR
JESD-30 代码：	R-PSSO-F3	元件数量：	1
端子数量：	3	工作模式：	ENHANCEMENT MODE
封装主体材料：	PLASTIC/EPOXY	封装形状：	RECTANGULAR
封装形式：	SMALL OUTLINE	峰值回流温度（摄氏度）：	NOT SPECIFIED
极性/信道类型：	N-CHANNEL	认证状态：	Not Qualified
表面贴装：	YES	端子形式：	FLAT
端子位置：	SINGLE	处于峰值回流温度下的最长时间：	NOT SPECIFIED
晶体管应用：	SWITCHING	晶体管元件材料：	SILICON
Base Number Matches：	1

2SK2857 数据手册

DATA SHEET

MOS FIELD EFFECT TRANSISTOR

2SK2857

N-CHANNEL MOS FIELD EFFECT TRANSISTOR

FOR HIGH SPEED SWITCHING

DESCRIPTION

PACKAGE DRAWING (Unit : mm)

The 2SK2857 is a switching device which can be driven directly

by a 5V power source.

4.5±0.1

1.6±0.2

Electrode

Connection

The 2SK2857 features a low on-state resistance and excellent

Switching Characteristics, and is suitable for applications such as

actuator driver.

1.5±0.1

1.Souce

2.Drain

3.Gate

FEATURES

0.42±0.06

0.42

±0.06

0.47

• Can be driven by a 5V power source.

• Low On-state resistance :

1.5

+0.03

0.41_-0.05

±0.06

3.0

DS(on)1

= 220 mΩ MAX. (V = 4 V, I = 1.5 A)

Marking : NX

DS(on)2

= 150 mΩ MAX. (V = 10 V, I = 2.5 A)

ABSOLUTE MAXIMUM RATINGS (T^A= 25 °C)

EQUIVALENT CIRCUIT

DSS

Drain to Source Voltage

Gate to Source Voltage

Drain Current (DC)

±20

±4

GSS

Drain

D(DC)

Drain Current (pulse) ^Note1

Total Power Dissipation ^Note2

Channel Temperature

Storage Temperature

D(pulse)

±16

Internal

Diode

Gate

°C

150

Gate

Protection

Diode

stg

−55 to +150 °C

Source

Notes1. PW ≤ 10 µs, Duty Cycle ≤ 1 %

2. Mounted on ceramic board of 16 cm²× 0.7 mm

Remark The diode connected between the gate and source of the transistor serves as a protector against ESD.

When this device is actually used, an additional protection circuit is externally required if a voltage exceeding

the rated voltage may be applied to this device.

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all devices/types available in every country. Please check with local NEC representative for

availability and additional information.

The mark • shows major revised points.

Document No. D11648EJ2V0DS00 (2nd edition)

Date Published March 1999 NS CP (K)

Printed in Japan

1998,1999

12 3 4 5 6 7 8

中文翻译

下载PDF

与2SK2857相关器件

型号	品牌	获取价格	描述	数据表
2SK2857-AZ	NEC	获取价格	Small Signal Field-Effect Transistor, 4A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-o
2SK2857C	RENESAS	获取价格	N-CHANNEL MOSFET FOR SWITCHING
2SK2857C-T1-AY	RENESAS	获取价格	N-CHANNEL MOSFET FOR SWITCHING
2SK2857C-T1-AZ	RENESAS	获取价格	N-CHANNEL MOSFET FOR SWITCHING
2SK2857-T1-AY	RENESAS	获取价格	TRANSISTOR,MOSFET,N-CHANNEL,60V V(BR)DSS,4A I(D),SOT-89
2SK2858	NEC	获取价格	N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING
2SK2858-A	NEC	获取价格	暂无描述
2SK2858-AT	RENESAS	获取价格	TRANSISTOR,MOSFET,N-CHANNEL,30V V(BR)DSS,100MA I(D),SC-70
2SK2858-T1	NEC	获取价格	Small Signal Field-Effect Transistor, 0.1A I(D), 30V, 1-Element, N-Channel, Silicon, Metal
2SK2858-T1-A	RENESAS	获取价格	Power MOSFETs for Automotive, SSP, /

与2SK2857相关文章

MBRS340T3G手册解读：参数说明、产品特性及应用
2024-06-28

4
PMOS管背靠背连接：串联还是并联？
2024-06-28

4
高压电解电容的分类与选型策略
2024-06-28

5
数码管：基本概念、分类、技术发展及市场趋势
2024-06-27

10

产品中心

服务支持

精选活动

关于我们

帮助中心

2SK2857

2SK2857 技术参数

2SK2857 数据手册

与2SK2857相关器件

与2SK2857相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

2SK2857

2SK2857 技术参数

2SK2857 数据手册

与2SK2857相关器件

与2SK2857相关文章

您还可以找

您在本页遇到什么问题？