Datasheet > 2SK2865_10

2SK2865_10

更新时间： 2024-01-13 20:50:52

品牌	Logo	应用领域
东芝 - TOSHIBA		转换器稳压器电机驱动
页数	文件大小	规格书
6页	409K
描述
Chopper Regulator, DC/DC Converter and Motor Drive Applications

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中文翻译

获取价格

数据手册

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2SK2865_10 数据手册

2SK2865

TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π−MOSV)

2SK2865

Chopper Regulator, DC/DC Converter and Motor Drive

Applications

Unit: mm

6.5 ± 0.2

5.2 ± 0.2

0.6 MAX.

•

Low drain−source ON-resistance

: R

= 4.2 Ω (typ.)

DS (ON)

High forward transfer admittance

: |Y | = 1.7 S (typ.)

Low leakage current

Enhancement mode

: I

= 100 μA (max) (V

= 600 V)

DSS

: V = 2.0 to 4.0 V (V

= 10 V, I = 1 mA)

1.1 ± 0.2

0.8 MAX.

Absolute Maximum Ratings (Ta = 25°C)

0.6 MAX.

1.05 MAX.

2 3

0.6 ± 0.15

Characteristic

Drain−source voltage

Symbol

Rating

Unit

600

±30

DSS

Drain−gate voltage (R

Gate−source voltage

= 20 kΩ)

DGR

GSS

2.3 ± 0.15

(Note 1)

1. GATE

2. DRAIN

（HEAT SINK）

3. SOURSE

Pulse (t = 1 ms)

(Note 1)

Drain current

Pulse (t = 100 μs)

(Note 1)

JEDEC

―

Drain power dissipation (Tc = 25°C)

Single-pulse avalanche energy

JEITA

(Note 2)

TOSHIBA

2-7J1B

Avalanche current

Weight: 0.36 g (typ.)

Repetitive avalanche energy (Note 3)

Channel temperature

°C

150

Storage temperature range

stg

−55 to 150

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.

operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate

reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and

Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).

Thermal Characteristics

Characteristic

Symbol

Max

Unit

Thermal resistance, channel to case

Thermal resistance, channel to ambient

6.25

125

°C / W

th (ch−c)

th (ch−a)

Note 1: Ensure that the channel temperature does not exceed 150°C.

Note 2: = 90 V, T = 25°C (initial), L = 41 mH, R = 25 Ω, I = 2 A

Note 3: Repetitive rating: pulse width limited by maximum channel temperature

This transistor is an electrostatic-sensitive device. Handle with care.

2010-02-05

12 3 4 5 6

中文翻译

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与2SK2865_10相关器件

型号	品牌	获取价格	描述	数据表
2SK2866	TOSHIBA	获取价格	N CHANNEL MOS TYPE (HIGH SPEED, HIGH CURRENT SWITCHING, CHOPPER REGULATOR, DC-DC CONVERTER
2SK2866(F)	TOSHIBA	获取价格	MOSFETs MOSFET N-Ch 600V 10A Rdson=0.75Ohm
2SK2866(Q)	TOSHIBA	获取价格	TRANSISTOR,MOSFET,N-CHANNEL,600V V(BR)DSS,10A I(D),TO-220AB
2SK2866_06	TOSHIBA	获取价格	Silicon N Channel MOS Type Chopper Regulator, DC−DC Converter and Motor Drive Applic
2SK2866_09	TOSHIBA	获取价格	Chopper Regulator, DC−DC Converter and Motor Drive Applications
2SK2867	ETC	获取价格
2SK2869	RENESAS	获取价格	Silicon N Channel MOS FET High Speed Power Switching
2SK2869	TYSEMI	获取价格	Low on-resistance RDS = 0.033 typ. 4V gate drive device can be driven from 5V source
2SK2869	HITACHI	获取价格	Silicon N Channel MOS FET High Speed Power Switching
2SK2869	KEXIN	获取价格	N-Channel Silicon MOSFET

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