2SK2869

更新时间： 2024-11-18 06:26:31

品牌	Logo	应用领域
瑞萨 - RENESAS		开关电源开关
页数	文件大小	规格书
9页	95K
描述
Silicon N Channel MOS FET High Speed Power Switching

阅读下载

中文翻译

获取价格

如果您发现信息不准确，欢迎纠错

2SK2869 数据手册

2SK2869(L), 2SK2869(S)

Silicon N Channel MOS FET

High Speed Power Switching

REJ03G1037-0200

(Previous: ADE-208-570)

Rev.2.00

Sep 07, 2005

Features

•

Low on-resistance

R_DS= 0.033 Ω typ.

•

High speed switching

4 V gate drive device can be driven from 5 V source

Outline

RENESAS Package code: PRSS0004ZD-B

(Package name: DPAK(L)-(2))

RENESAS Package code: PRSS0004ZD-C

(Package name: DPAK(S))

1. Gate

2. Drain

3. Source

4. Drain

Rev.2.00 Sep 07, 2005 page 1 of 8

12 3 4 5 6 7...9

中文翻译

下载PDF

型号	品牌	获取价格	描述	数据表
2SK2869(L)	RENESAS	获取价格	0.07ohm, POWER, FET, SC-63, 3 PIN
2SK2869(L)-(2)	HITACHI	获取价格	Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
2SK2869(S)	HITACHI	获取价格	Power Field-Effect Transistor, 0.07ohm, SC-64, 3 PIN
2SK2869(S)	RENESAS	获取价格	暂无描述
2SK2869(S)-(1)	HITACHI	获取价格	Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
2SK2869(S)-(2)	HITACHI	获取价格	Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
2SK2869(S)-(3)	HITACHI	获取价格	Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
2SK2869(S)TL	HITACHI	获取价格	Power Field-Effect Transistor, 20A I(D), 60V, 0.07ohm, 1-Element, N-Channel, Silicon, Meta
2SK2869(S)TL	RENESAS	获取价格	20 A, 60 V, 0.07 ohm, N-CHANNEL, Si, POWER, MOSFET
2SK2869(S)TR	HITACHI	获取价格	Power Field-Effect Transistor, 20A I(D), 60V, 0.07ohm, 1-Element, N-Channel, Silicon, Meta