N-channel MOS-FET
FAP-IIS Series
450V 1,2W ±8A 30W
> Features
> Outline Drawing
- High Speed Switching
- Low On-Resistance
- No Secondary Breakdown
- Low Driving Power
- High Voltage
- VGS = ± 30V Guarantee
- Repetitive Avalanche Rated
> Applications
- Switching Regulators
- UPS
- DC-DC converters
- General Purpose Power Amplifier
> Maximum Ratings and Characteristics
> Equivalent Circuit
- Absolute Maximum Ratings (TC=25°C), unless otherwise specified
Item
Symbol
Rating
Unit
V
Drain-Source-Voltage
V
450
DS
Continous Drain Current
Pulsed Drain Current
I
±8
±32
±35
8
A
D
I
A
D(puls)
Gate-Source-Voltage
V
V
GS
Repetitive or Non-Repetitive (Tch £ 150°C)
Avalanche Energy
I
A
AR
E
164.1
30
mJ
W
°C
°C
AS
Max. Power Dissipation
Operating and Storage Temperature Range
P
D
T
150
ch
T
-55 ~ +150
L=4.70mH,Vcc=45V
stg
Electrical Characteristics (TC=25°C), unless otherwise specified
-
Item
Symbol
Test conditions
Min.
450
3,5
Typ.
4,0
Max.
Unit
V
ID=1mA
ID=1mA
VDS=450V
VGS=0V
VGS=±35V
ID=4A
VGS=0V
Drain-Source Breakdown-Voltage
Gate Threshhold Voltage
Zero Gate Voltage Drain Current
BV
DSS
VDS=VGS
Tch=25°C
Tch=125°C
VDS=0V
V
I
4,5
500
1,0
V
GS(th)
DSS
10
0,2
10
µA
mA
nA
W
Gate Source Leakage Current
Drain Source On-State Resistance
Forward Transconductance
Input Capacitance
I
R
g
C
C
C
t
100
1,2
GSS
DS(on)
fs
VGS=10V
VDS=25V
1,0
4
ID=4A
2
S
VDS=25V
540
100
45
810
150
70
pF
pF
pF
ns
ns
ns
ns
A
iss
VGS=0V
f=1MHz
VCC=300V
ID=8A
Output Capacitance
oss
rss
d(on)
r
Reverse Transfer Capacitance
Turn-On-Time ton (ton=td(on)+tr)
13
20
t
40
60
Turn-Off-Time toff (ton=td(off)+tf)
VGS=10V
t
45
70
d(off)
f
R
GS=10 W
Tch=25°C
t
25
40
Avalanche Capability
I
L = 4,70mH
8
AV
SD
rr
IF=2xIDR VGS=0V Tch=25°C
IF=IDR VGS=0V
Diode Forward On-Voltage
Reverse Recovery Time
Reverse Recovery Charge
V
t
1,1
450
3,7
1,65
V
ns
µC
-dIF/dt=100A/µs Tch=25°C
Q
rr
-
Thermal Characteristics
Item
Symbol
Test conditions
channel to case
channel to air
Min.
Typ.
Max.
4,17
Unit
Thermal Resistance
R
°C/W
th(ch-c)
th(ch-a)
R
62,5 °C/W