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2SK2883(2-10S2B)

更新时间： 2024-02-06 14:00:16
品牌 Logo 应用领域
东芝 - TOSHIBA 开关脉冲晶体管
页数 文件大小 规格书
6页 467K
描述
TRANSISTOR 3 A, 800 V, 3.6 ohm, N-CHANNEL, Si, POWER, MOSFET, ROHS COMPLIANT, 2-10S2B, 3 PIN, FET General Purpose Power

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2SK2883(2-10S2B) 技术参数

是否无铅：含铅是否Rohs认证：不符合
生命周期：Lifetime Buy包装说明：SMALL OUTLINE, R-PSSO-G2
针数：3Reach Compliance Code：unknown
风险等级：5.3Is Samacsys：N
雪崩能效等级（Eas）：300 mJ外壳连接：DRAIN
配置：SINGLE WITH BUILT-IN DIODE最小漏源击穿电压：800 V
最大漏极电流 (ID)：3 A最大漏源导通电阻：3.6 Ω
FET 技术：METAL-OXIDE SEMICONDUCTORJESD-30 代码：R-PSSO-G2
元件数量：1端子数量：2
工作模式：ENHANCEMENT MODE封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
峰值回流温度（摄氏度）：NOT SPECIFIED极性/信道类型：N-CHANNEL
最大脉冲漏极电流 (IDM)：9 A认证状态：Not Qualified
表面贴装：YES端子形式：GULL WING
端子位置：SINGLE处于峰值回流温度下的最长时间：NOT SPECIFIED
晶体管应用：SWITCHING晶体管元件材料：SILICON
Base Number Matches：1

2SK2883(2-10S2B) 数据手册

 浏览型号2SK2883(2-10S2B)的Datasheet PDF文件第2页浏览型号2SK2883(2-10S2B)的Datasheet PDF文件第3页浏览型号2SK2883(2-10S2B)的Datasheet PDF文件第4页浏览型号2SK2883(2-10S2B)的Datasheet PDF文件第5页浏览型号2SK2883(2-10S2B)的Datasheet PDF文件第6页 
2SK2883  
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOS III)  
2SK2883  
Chopper Regulator, DC−DC Converter and Motor Drive  
Applications  
Unit: mm  
z Low drain−source ON resistance  
z High forward transfer admittance  
: R  
= 3.0 Ω (typ.)  
DS (ON)  
: |Y | = 2.6 S (typ.)  
fs  
z Low leakage current  
z Enhancement mode  
: I  
= 100 μA (max) (V  
= 640 V)  
DSS  
DS  
: V = 2.0 to 4.0 V (V  
= 10 V, I = 1 mA)  
D
th  
DS  
Absolute Maximum Ratings (Ta = 25°C)  
Characteristics  
Drain−source voltage  
Symbol  
Rating  
Unit  
V
800  
800  
±30  
3
V
V
DSS  
Drain−gate voltage (R  
Gate−source voltage  
= 20 kΩ)  
V
GS  
DGR  
V
V
GSS  
DC (Note 1)  
I
A
D
Drain current  
Pulse (Note 1)  
I
9
A
DP  
Drain power dissipation (Tc = 25°C)  
P
75  
W
D
AS  
AR  
JEDEC  
JEITA  
―
―
Single pulse avalanche energy  
E
300  
mJ  
(Note 2)  
Avalanche current  
I
3
7.5  
A
TOSHIBA  
2-10S1B  
Repetitive avalanche energy (Note 3)  
Channel temperature  
E
mJ  
°C  
°C  
AR  
Weight: 1.5 g (typ.)  
T
ch  
150  
Storage temperature range  
T
−55 to 150  
stg  
Note: Using continuously under heavy loads (e.g. the application of high  
temperature/current/voltage and the significant change in temperature, etc.)  
may cause this product to decrease in the reliability significantly even if the  
operating conditions (i.e. operating temperature/current/voltage, etc.) are  
within the absolute maximum ratings. Please design the appropriate  
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook  
(“Handling Precautions”/“Derating Concept and Methods”) and individual  
reliability data (i.e. reliability test report and estimated failure rate, etc).  
Thermal Characteristics  
Characteristics  
Symbol  
Max  
Unit  
Thermal resistance, channel to case  
Thermal resistance, channel to ambient  
R
1.67  
83.5  
°C / W  
°C / W  
th (ch−c)  
R
th (ch−a)  
Note 1: Ensure that the channel temperature does not exceed 150°C.  
Note 2: = 90 V, T = 25°C (initial), L = 60.0 mH, R = 25 Ω,  
JEDEC  
JEITA  
―
―
V
DD  
ch  
G
I
= 3 A  
AR  
TOSHIBA  
2-10S2B  
Note 3: Repetitive rating: pulse width limited by maximum channel  
temperature  
Weight: 1.5 g (typ.)  
This transistor is an electrostatic-sensitive device.  
Please handle with caution.  
1
2011-04-06  
123456

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