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2SK2885S PDF预览

2SK2885S

更新时间: 2024-01-24 11:31:05
品牌 Logo 应用领域
日立 - HITACHI 开关电源开关
页数 文件大小 规格书
7页 41K
描述
Silicon N Channel MOS FET High Speed Power Switching

2SK2885S 技术参数

生命周期:Transferred包装说明:SMALL OUTLINE, R-PSSO-G2
Reach Compliance Code:compliantECCN代码:EAR99
风险等级:5.31配置:SINGLE
最小漏源击穿电压:30 V最大漏极电流 (ID):45 A
最大漏源导通电阻:0.025 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JESD-30 代码:R-PSSO-G2元件数量:1
端子数量:2工作模式:ENHANCEMENT MODE
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE极性/信道类型:N-CHANNEL
认证状态:Not Qualified表面贴装:YES
端子形式:GULL WING端子位置:SINGLE
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

2SK2885S 数据手册

 浏览型号2SK2885S的Datasheet PDF文件第2页浏览型号2SK2885S的Datasheet PDF文件第3页浏览型号2SK2885S的Datasheet PDF文件第4页浏览型号2SK2885S的Datasheet PDF文件第5页浏览型号2SK2885S的Datasheet PDF文件第6页浏览型号2SK2885S的Datasheet PDF文件第7页 
2SK2885(L), 2SK2885(S)  
Silicon N Channel MOS FET  
High Speed Power Switching  
ADE-208-545 A  
2nd. Edition  
Features  
Low on-resistance  
RDS(on) = 10mtyp.  
4V gate drive devices.  
High speed switching  
Outline  
LDPAK  
4
4
D
1
2
3
1
2
3
1. Gate  
G
2. Drain  
3. Source  
4. Drain  
S

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