生命周期: | Transferred | 包装说明: | SMALL OUTLINE, R-PSSO-G2 |
Reach Compliance Code: | compliant | ECCN代码: | EAR99 |
风险等级: | 5.31 | 配置: | SINGLE |
最小漏源击穿电压: | 30 V | 最大漏极电流 (ID): | 45 A |
最大漏源导通电阻: | 0.025 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JESD-30 代码: | R-PSSO-G2 | 元件数量: | 1 |
端子数量: | 2 | 工作模式: | ENHANCEMENT MODE |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 极性/信道类型: | N-CHANNEL |
认证状态: | Not Qualified | 表面贴装: | YES |
端子形式: | GULL WING | 端子位置: | SINGLE |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2SK2886 | TOSHIBA |
获取价格 |
N CHANNEL MOS TYPE (HIGH SPEED, HIGH CURRENT SWITCHING, CHOPPER REGULATOR, DC-DC CONVERTER |
![]() |
2SK2886_06 | TOSHIBA |
获取价格 |
Silicon N Channel MOS Type |
![]() |
2SK2886_09 | TOSHIBA |
获取价格 |
Chopper Regulator, DC−DC Converter and Motor DriveApplications |
![]() |
2SK2887 | KEXIN |
获取价格 |
N-Channel Silicon MOSFET |
![]() |
2SK2887 | ROHM |
获取价格 |
Switching (200V, 3A) |
![]() |
2SK2887 | TYSEMI |
获取价格 |
Low on-resistance. Fast switching speed Wide SOA (safe operating area) Easy to parallel. |
![]() |
2SK2887TL | ROHM |
获取价格 |
Power Field-Effect Transistor, 3A I(D), 200V, 0.9ohm, 1-Element, N-Channel, Silicon, Metal |
![]() |
2SK2889 | TOSHIBA |
获取价格 |
N CHANNEL MOS TYPE (HIGH SPEED, HIGH CURRENT SWITCHING, CHOPPER REGULATOR, DC-DC CONVERTER |
![]() |
2SK2889(2-10S1B) | TOSHIBA |
获取价格 |
TRANSISTOR 10 A, 600 V, 0.75 ohm, N-CHANNEL, Si, POWER, MOSFET, 2-10S1B, 3 PIN, FET Genera |
![]() |
2SK2889(2-10S2B) | TOSHIBA |
获取价格 |
TRANSISTOR 10 A, 600 V, 0.75 ohm, N-CHANNEL, Si, POWER, MOSFET, 2-10S2B, 3 PIN, FET Genera |
![]() |