Datasheet > 2SK2889(2-10S1B)

2SK2889(2-10S1B)

更新时间： 2024-02-09 01:05:12

品牌	Logo	应用领域
东芝 - TOSHIBA		开关脉冲晶体管
页数	文件大小	规格书
6页	456K
描述
TRANSISTOR 10 A, 600 V, 0.75 ohm, N-CHANNEL, Si, POWER, MOSFET, 2-10S1B, 3 PIN, FET General Purpose Power

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技术参数
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2SK2889(2-10S1B) 技术参数

是否无铅：	含铅	是否Rohs认证：	不符合
生命周期：	Lifetime Buy	包装说明：	IN-LINE, R-PSIP-T3
针数：	3	Reach Compliance Code：	unknown
风险等级：	5.32	雪崩能效等级（Eas）：	363 mJ
外壳连接：	DRAIN	配置：	SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压：	600 V	最大漏极电流 (ID)：	10 A
最大漏源导通电阻：	0.75 Ω	FET 技术：	METAL-OXIDE SEMICONDUCTOR
JESD-30 代码：	R-PSIP-T3	元件数量：	1
端子数量：	3	工作模式：	ENHANCEMENT MODE
封装主体材料：	PLASTIC/EPOXY	封装形状：	RECTANGULAR
封装形式：	IN-LINE	峰值回流温度（摄氏度）：	NOT SPECIFIED
极性/信道类型：	N-CHANNEL	最大脉冲漏极电流 (IDM)：	40 A
认证状态：	Not Qualified	表面贴装：	NO
端子形式：	THROUGH-HOLE	端子位置：	SINGLE
处于峰值回流温度下的最长时间：	NOT SPECIFIED	晶体管应用：	SWITCHING
晶体管元件材料：	SILICON	Base Number Matches：	1

2SK2889(2-10S1B) 数据手册

2SK2889

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV)

2SK2889

Chopper Regulator, DC−DC Converter and Motor Drive

Applications

Unit: mm

z Low drain−source ON resistance

z High forward transfer admittance

: R

= 0.54 Ω (typ.)

DS (ON)

: |Y | = 9.0 S (typ.)

z Low leakage current

z Enhancement mode

: I

= 100 μA (max) (V

= 600 V)

DSS

: V = 2.0 to 4.0 V (V

= 10 V, I = 1 mA)

Absolute Maximum Ratings (Ta = 25°C)

Characteristics

Drain−source voltage

Symbol

Rating

Unit

600

±30

DSS

Drain−gate voltage (R

Gate−source voltage

= 20 kΩ)

DGR

GSS

DC (Note 1)

Drain current

Pulse (Note 1)

Drain power dissipation (Tc = 25°C)

Single pulse avalanche energy

100

JEDEC

JEITA

―

363

(Note 2)

Avalanche current

TOSHIBA

2-10S1B

Repetitive avalanche energy (Note 3)

Channel temperature

°C

Weight: 1.5 g (typ.)

150

Storage temperature range

−55 to 150

stg

Note: Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in temperature,

etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e. operating temperature/current/voltage,

etc.) are within the absolute maximum ratings. Please design the

appropriate reliability upon reviewing the Toshiba Semiconductor

Reliability Handbook (“Handling Precautions”/“Derating Concept and

Methods”) and individual reliability data (i.e. reliability test report and

estimated failure rate, etc).

Thermal Characteristics

Characteristics

Symbol

Max

Unit

Thermal resistance, channel to case

Thermal resistance, channel to ambient

1.25

83.3

°C / W

th (ch−c)

th (ch−a)

Note 1: Ensure that the channel temperature does not exceed 150°C.

Note 2: = 90 V, T = 25°C (initial), L = 6.36 mH, R = 25 Ω,

JEDEC

JEITA

―

= 10 A

TOSHIBA

2-10S2B

Note 3: Repetitive rating: pulse width limited by maximum channel

temperature

Weight: 1.5 g (typ.)

This transistor is an electrostatic-sensitive device.

Please handle with caution.

2009-09-29

12 3 4 5 6

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与2SK2889(2-10S1B)相关器件

型号	品牌	描述	获取价格	数据表
2SK2889(2-10S2B)	TOSHIBA	TRANSISTOR 10 A, 600 V, 0.75 ohm, N-CHANNEL, Si, POWER, MOSFET, 2-10S2B, 3 PIN, FET Genera	获取价格
2SK2889(Q)	TOSHIBA	MOSFET N-CH 600V 10A TO-220	获取价格
2SK2889_06	TOSHIBA	Silicon N Channel MOS Type Chopper Regulator, DC−DC Converter and Motor Drive Applic	获取价格
2SK2889_09	TOSHIBA	Chopper Regulator, DC−DC Converter and Motor Drive Applications	获取价格
2SK2890-01	FUJI	N-channel MOS-FET	获取价格
2SK2890-01MR	FUJI	MOSFETs	获取价格

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