Datasheet > 2SK2889_06

2SK2889_06

更新时间： 2024-01-26 02:42:56

品牌	Logo	应用领域
东芝 - TOSHIBA		转换器稳压器电机驱动 DC-DC转换器
页数	文件大小	规格书
6页	731K
描述
Silicon N Channel MOS Type Chopper Regulator, DC−DC Converter and Motor Drive Applications

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

2SK2889_06 数据手册

2SK2889

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV)

2SK2889

Chopper Regulator, DC−DC Converter and Motor Drive

Applications

Unit: mm

z Low drain−source ON resistance

z High forward transfer admittance

: R

= 0.54 Ω (typ.)

DS (ON)

: |Y | = 9.0 S (typ.)

z Low leakage current

z Enhancement mode

: I

= 100 μA (max) (V

= 600 V)

DSS

: V = 2.0~4.0 V (V

= 10 V, I = 1 mA)

Absolute Maximum Ratings (Ta = 25°C)

Characteristics

Drain−source voltage

Symbol

Rating

Unit

600

±30

DSS

Drain−gate voltage (R

Gate−source voltage

= 20 kΩ)

DGR

GSS

DC (Note 1)

Drain current

Pulse (Note 1)

Drain power dissipation (Tc = 25°C)

Single pulse avalanche energy

100

JEDEC

JEITA

―

363

(Note 2)

Avalanche current

TOSHIBA

2-10S1B

Repetitive avalanche energy (Note 3)

Channel temperature

°C

Weight: 1.5 g (typ.)

150

Storage temperature range

−55~150

stg

Note: Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in temperature,

etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e. operating temperature/current/voltage,

etc.) are within the absolute maximum ratings. Please design the

appropriate reliability upon reviewing the Toshiba Semiconductor

Reliability Handbook (“Handling Precautions”/Derating Concept and

Methods) and individual reliability data (i.e. reliability test report and

estimated failure rate, etc).

Thermal Characteristics

Characteristics

Symbol

Max

1.25

83.3

Unit

Thermal resistance, channel to case

°C / W

th (ch−c)

th (ch−a)

Thermal resistance, channel to

ambient

JEDEC

JEITA

―

Note 1: Ensure that the channel temperature does not exceed 150°C.

Note 2: = 90 V, T = 25°C (initial), L = 6.36 mH, R = 25 Ω,

= 10 A

TOSHIBA

2-10S2B

Note 3: Repetitive rating: pulse width limited by maximum channel

temperature

Weight: 1.5 g (typ.)

This transistor is an electrostatic-sensitive device.

Please handle with caution.

2006-11-08

12 3 4 5 6

中文翻译

下载PDF

与2SK2889_06相关器件

型号	品牌	获取价格	描述	数据表
2SK2889_09	TOSHIBA	获取价格	Chopper Regulator, DC−DC Converter and Motor Drive Applications
2SK2890-01	FUJI	获取价格	N-channel MOS-FET
2SK2890-01MR	FUJI	获取价格	MOSFETs
2SK2890-01MR_05	FUJI	获取价格	N-CHANNEL SILICON POWER MOSFET
2SK2891-01	FUJI	获取价格	Power MOSFET
2SK2891-01_05	FUJI	获取价格	N-CHANNEL SILICON POWER MOSFET
2SK2892-01R	FUJI	获取价格	N-channel MOS-FET
2SK2892-01R_05	FUJI	获取价格	N-CHANNEL SILICON POWER MOSFET
2SK2893-01	FUJI	获取价格	N-channel MOS-FET
2SK2893-01_05	FUJI	获取价格	N-CHANNEL SILICON POWER MOSFET