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2SK2899-01R_05 PDF预览

2SK2899-01R_05

更新时间: 2024-11-02 07:32:23
品牌 Logo 应用领域
富士电机 - FUJI /
页数 文件大小 规格书
4页 326K
描述
N-CHANNEL SILICON POWER MOSFET

2SK2899-01R_05 数据手册

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2SK2899-01R  
FUJI POWER MOSFET  
200509  
N-CHANNEL SILICON POWER MOSFET  
FAP-IIIB SERIES  
Features  
Outline Drawings  
High speed switching  
Low on-resistance  
No secondary breakdown  
Low driving power  
High voltage  
TO-3PF  
Avalanche-proof  
Applications  
Switching regulators  
DC-DC converters  
General purpose power amplifier  
Maximum ratings and characteristics  
Absolute maximum ratings (Tc=25°C unless otherwise specified)  
Equivalent circuit schematic  
Item  
Drain-source voltage  
Symbol  
VDS  
Rating  
60  
Unit  
V
Remarks  
Drain(D)  
Continuous drain current  
Pulsed drain current  
ID  
±100  
±400  
±20  
A
ID[puls]  
VGS  
EAV  
PD  
A
Gate(G)  
Gate-source peak voltage  
Maximum avalanche energy  
Maximum power dissipation  
Operating and storage  
temperature range  
V
1268.3  
*1  
mJ  
W
°C  
°C  
125  
Tch  
+150  
-55 to +150  
Source(S)  
Tstg  
*1 L=0.169mH, Vcc=24V  
Electrical characteristics (Tc =25°C unless otherwise specified)  
Min.  
Typ.  
Max. Units  
Test Conditions  
Item  
Symbol  
V(BR)DSS  
VGS(th)  
IDSS  
ID=1mA  
ID=1mA  
VDS=60V  
VGS=0V  
VDS=VGS  
VGS=0V  
V
60  
Drain-source breakdown voltage  
Gate threshold voltage  
Zero gate voltage drain current  
1.0  
1.5  
10  
0.2  
10  
7.0  
5.0  
80  
2.0  
500  
1.0  
100  
V
Tch=25°C  
µA  
mA  
nA  
Tch=125°C  
20V  
VGS=±  
VDS=0V  
Gate-source leakage current  
IGSS  
11.0  
6.5  
ID=50A VGS=10V  
VGS=4V  
m  
mΩ  
S
Drain-source on-state resistance  
RDS(on)  
VGS=10V  
40  
ID=50A  
VDS=25V  
Forward transconductance  
Input capacitance  
gfs  
6700  
2100  
570  
20  
10050  
Ciss  
Coss  
Crss  
td(on)  
tr  
VDS=25V  
VGS=0V  
f=1MHz  
VCC=30V RG=10 Ω  
ID=100A  
3150  
860  
30  
Output capacitance  
Reverse transfer capacitance  
Turn-on time  
pF  
ns  
160  
410  
330  
300  
620  
500  
VGS=10V  
Turn-off time  
td(off)  
tf  
L=100µH  
Tch=25°C  
A
100  
Avalanche capability  
IAV  
V
Diode forward on-voltage  
Reverse recovery time  
Reverse recovery charge  
IF=100A VGS=0V Tch=25°C  
IF=50A  
1.0  
85  
0.21  
1.5  
VSD  
trr  
ns  
µC  
-di/dt=100A/µs Tch=25°C  
Qrr  
Thermal characteristics  
Item  
Symbol  
Rth(ch-c)  
Rth(ch-a)  
Min.  
Typ.  
Max. Units  
1.0  
°C/W  
Thermal resistance  
30.0  
°C/W  
www.fujielectric.co.jp/fdt/scd  
1

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