Datasheet > 2SK2900

2SK2900

更新时间： 2024-11-01 22:52:55

品牌	Logo	应用领域
富士电机 - FUJI		/
页数	文件大小	规格书
3页	248K
描述
N CHANNEL MOSFET

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中文翻译

获取价格

数据手册

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2SK2900 数据手册

N-channel MOS-FET

2SK2900-01

14,5mW

FAP-IIIB Series

60V

±45A

60W

> Features

> Outline Drawing

- High Current

- Low On-Resistance

- No Secondary Breakdown

- Low Driving Power

- Avalanche Rated

> Applications

- Motor Control

- General Purpose Power Amplifier

DC-DC converters

> Maximum Ratings and Characteristics

- Absolute Maximum Ratings (TC=25°C), unless otherwise specified

Item

Symbol

Rating

Unit

Drain-Source-Voltage

Continous Drain Current

Pulsed Drain Current

±45

±180

D(puls)

Gate-Source-Voltage

±30

461.9

Maximum Avalanche Energy

Max. Power Dissipation

Operating and Storage Temperature Range

mJ*

150

°C

-55 ~ +150

* L=0,304mH, V_CC=24V

stg

Electrical Characteristics (T_C=25°C), unless otherwise specified

Item

Symbol

Test conditions

Min.

2,5

Typ.

Max.

Unit

I_D=1mA

V_GS=0V

Drain-Source Breakdown-Voltage

Gate Threshhold Voltage

Zero Gate Voltage Drain Current

DSS

I_D=10mA

V_DS=60V

V_GS=0V

V_DS=V_GS

T_ch=25°C

T_ch=125°C

V_DS=0V

3,5

500

1,0

GS(th)

DSS

0,2

µA

VG_S=30V

I_D=22.5A

V_DS=25V

V_GS=0V

Gate Source Leakage Current

Drain Source On-State Resistance

Forward Transconductance

Input Capacitance

100

14,5

GSS

DS(on)

V_GS=10V

V_DS=25V

12,0

2300

910

260

3450

1370

390

iss

Output Capacitance

oss

rss

d(on)

Reverse Transfer Capacitance

Turn-On-Time t_on(t_on=t_d(on)+t_r)

f=1MHz

V_CC=30V

V_GS=10V

I_D=45A

Turn-Off-Time t_off(t_on=t_d(off)+t_f)

120

d(off)

R_GS=10 W

T_ch=25°C

Avalanche Capability

L = 100µH

I_F=45A V_GS=0V T_ch=25°C

I_F=45A V_GS=0V

Diode Forward On-Voltage

Reverse Recovery Time

Reverse Recovery Charge

1,0

1,5

µC

-dI/dt=100A/µs T_ch=25°C

0,11

Thermal Characteristics

Item

Symbol

Min.

Typ.

Max.

Unit

Thermal Resistance

channel to case

channel to ambient

2,08 °C/W

th(ch-c)

th(ch-a)

75,00 °C/W

12 3

中文翻译

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