Datasheet > 2SK2895-01_05

2SK2895-01_05

更新时间： 2022-09-18 11:58:50

品牌	Logo	应用领域
富士电机 - FUJI		/
页数	文件大小	规格书
4页	285K
描述
N-CHANNEL SILICON POWER MOSFET

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数据手册

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2SK2895-01_05 数据手册

FUJI POWER MOSFET

2SK2895-01

FAP-IIIB Series

200511

N-CHANNEL SILICON POWER MOSFET

Outline Drawings [mm]

TO-220AB

Features

High speed switching

Low on-resistance

No secondary breadown

Low driving power

Applications

Switching regulators

UPS (Uninterruptible Power Supply)

DC-DCconverters

Equivalent circuit schematic

Maximum ratings and characteristicAbsolute maximum ratings

(Tc=25°C unless otherwise specified)

Drain(D)

Item

Symbol

VDS

Ratings

Unit

Drain-source voltage

Continuous drain current

Pulsed drain current

±45

±180

Gate(G)

ID p

VGS

Source(S)

Gate-source voltage

±20

°C

Maximum avalanche energy

Maximum power dissipation

Operating and storage

Temperature range

EAV

461.9

Tch

Tstg

+150

-55 to +150

*1 L=0.304mH, Vcc=24V

Electrical characteristics (Tc =25°C unless otherwise specified)

Min.

Typ.

Max. Units

Test Conditions

Item

Symbol

BVDSS

VGS(th)

IDSS

ID= 1mA

VGS=0V

Drain-source breakdown voltage

Gate threshold voltage

VDS=VGS

1.0

1.5

0.2

2.0

500

1.0

100

Tch=25°C

μA

mΩ

VDS=60V VGS=0V

Zero gate voltage drain current

Tch=125°C

VDS=0V

Gate-source leakage current

IGSS

VGS=±20V

VGS=4V

Drain-source on-state resistance

RDS(on)

ID=22.5A

VGS=10V

ID=22.5A VDS=25V

VDS=25V

Forward transcondutance

Input capacitance

gfs

15.0

35.0

Ciss

2900

4350

1400

390

Output capacitance

Coss

Crss

td(on)

VGS=0V

930

260

Reverse transfer capacitance

Turn-on time ton

f=1MHz

VCC=30V ID=45A

VGS=10V

Turn-off time toff

190

290

140

td(off)

RGS=10 Ω

L=100 H Tch=25°C

Avalanche capability

IAV

Diode forward on-voltage

Reverse recovery time

Reverse recovery charge

IF=45A VGS=0V Tch=25°C

IF=45A VGS=0V

0.95

0.10

1.43

VSD

trr

Qrr

μC

-di/dt=100A/μs

Tch=25°C

Thermalcharacteristics

Item

Min.

Typ.

Max. Units

Symbol

Test Conditions

Rth(ch-c)

channel to case

2.08

°C/W

Thermal resistance

Rth(ch-a)

channel to ambient

75.0

°C/W

http://www.fujielectric.co.jp/fdt/scd/

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