2SK2884(Q)

更新时间： 2024-02-14 15:44:45

品牌	Logo	应用领域
东芝 - TOSHIBA		晶体晶体管功率场效应晶体管
页数	文件大小	规格书
6页	741K
描述
MOSFET N-CH 800V 5A TO-220

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技术参数
数据手册

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2SK2884(Q) 技术参数

生命周期：	Obsolete	Reach Compliance Code：	unknown
风险等级：	5.58	Base Number Matches：	1

2SK2884(Q) 数据手册

2SK2884

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSIII)

2SK2884

Chopper Regulator, DC−DC Converter Applications

Unit: mm

z Low drain−source ON resistance

z High forward transfer admittance

: R

= 1.9 Ω (typ.)

DS (ON)

: |Y | = 3.8 S (typ.)

z Low leakage current

z Enhancement mode

: I

= 100 μA (max) (V

= 640 V)

DSS

: V = 2.0~4.0 V (V

= 10 V, I = 1 mA)

Absolute Maximum Ratings (Ta = 25°C)

Characteristics

Drain−source voltage

Symbol

Rating

Unit

800

±30

DSS

Drain−gate voltage (R

Gate−source voltage

= 20 kΩ)

DGR

GSS

DC (Note 1)

Drain current

Pulse (Note 1)

Drain power dissipation

100

JEDEC

JEITA

―

Single pulse avalanche energy

(Note 2)

370

Avalanche current

TOSHIBA

2-10S1B

Repetitive avalanche energy (Note 3)

Channel temperature

°C

Weight: 1.5 g (typ.)

150

Storage temperature range

−55~150

stg

Note: Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in temperature,

etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e. operating temperature/current/voltage,

etc.) are within the absolute maximum ratings. Please design the

appropriate reliability upon reviewing the Toshiba Semiconductor

Reliability Handbook (“Handling Precautions”/Derating Concept and

Methods) and individual reliability data (i.e. reliability test report and

estimated failure rate, etc).

Thermal Characteristics

Characteristics

Symbol

Max

1.25

83.3

Unit

Thermal resistance, channel to case

°C / W

th (ch−c)

th (ch−a)

Thermal resistance, channel to

ambient

JEDEC

JEITA

―

Note 1: Ensure that the channel temperature does not exceed 150°C.

Note 2: = 90 V, T = 25°C (initial), L = 27 mH, R = 25 Ω,

TOSHIBA

2-10S2B

= 5 A

Weight: 1.5 g (typ.)

Note 3: Repetitive rating: pulse width limited by maximum channel

temperature.

This transistor is an electrostatic-sensitive device.

Please handle with caution.

2006-11-10

12 3 4 5 6

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