Datasheet > 2SK2883(TE24L)

2SK2883(TE24L)

更新时间： 2024-01-23 07:10:58

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东芝 - TOSHIBA		/
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描述
2SK2883(TE24L)

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技术参数
数据手册

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2SK2883(TE24L) 技术参数

生命周期：	Obsolete	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.84
Base Number Matches：	1

2SK2883(TE24L) 数据手册

2SK2883

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L −π−MOSV)

2SK2883

Chopper Regulator, DC−DC Converter and Motor Drive

Applications

Unit: mm

z Low drain−source ON resistance

z High forward transfer admittance

: R

= 3.0 Ω (typ.)

DS (ON)

: |Y | = 2.6 S (typ.)

z Low leakage current

z Enhancement mode

: I

= 100 μA (max) (V

= 640 V)

DSS

: V = 2.0 to 4.0 V (V

= 10 V, I = 1 mA)

Absolute Maximum Ratings (Ta = 25°C)

Characteristics

Drain−source voltage

Symbol

Rating

Unit

800

±30

DSS

Drain−gate voltage (R

Gate−source voltage

= 20 kΩ)

DGR

GSS

DC (Note 1)

Drain current

Pulse (Note 1)

Drain power dissipation (Tc = 25°C)

JEDEC

JEITA

―

Single pulse avalanche energy

300

(Note 2)

Avalanche current

7.5

TOSHIBA

2-10S1B

Repetitive avalanche energy (Note 3)

Channel temperature

°C

Weight: 1.5 g (typ.)

150

Storage temperature range

−55 to 150

stg

Note: Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in temperature, etc.)

may cause this product to decrease in the reliability significantly even if the

operating conditions (i.e. operating temperature/current/voltage, etc.) are

within the absolute maximum ratings. Please design the appropriate

reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual

reliability data (i.e. reliability test report and estimated failure rate, etc).

Thermal Characteristics

Characteristics

Symbol

Max

Unit

Thermal resistance, channel to case

Thermal resistance, channel to ambient

1.67

83.3

°C / W

th (ch−c)

th (ch−a)

Note 1: Ensure that the channel temperature does not exceed 150°C.

Note 2: = 90 V, T = 25°C (initial), L = 60.0 mH, R = 25 Ω,

JEDEC

JEITA

―

= 3 A

TOSHIBA

2-10S2B

Note 3: Repetitive rating: pulse width limited by maximum channel

temperature

Weight: 1.5 g (typ.)

This transistor is an electrostatic-sensitive device.

Please handle with caution.

2009-09-29

12 3 4 5 6

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