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2SK2867 PDF预览

2SK2867

更新时间： 2024-11-17 23:20:39
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其他 - ETC 晶体晶体管开关光电二极管
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中文翻译

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2SK2867 数据手册

 浏览型号2SK2867的Datasheet PDF文件第2页浏览型号2SK2867的Datasheet PDF文件第3页浏览型号2SK2867的Datasheet PDF文件第4页 
Ordering number : ENN6617  
N-Channel Silicon MOSFET  
2SK2867  
Ultrahigh-Speed Switching Applications  
Features  
Package Dimensions  
unit : mm  
•
Ultrahigh-speed switching.  
• Low-voltage drive.  
2091A  
[2SK2867]  
0.4  
0.16  
3
0 to 0.1  
0.95  
1.9  
2.9  
0.95  
2
1
1 : Gate  
2 : Source  
3 : Drain  
SANYO : CP  
Specifications  
Absolute Maximum Ratings at Ta=25°C  
Parameter  
Drain-to-Source Voltage  
Symbol  
Conditions  
Ratings  
Unit  
V
450  
±15  
V
V
DSS  
GSS  
Gate-to-Source Voltage  
Drain Current (DC)  
V
I
30  
mA  
mA  
mW  
°C  
D
Drain Current (Pulse)  
Allowable Power Dissipation  
Channel Temperature  
Storage Temperature  
I
PW≤10µs, duty cycle≤1%  
Tc=25°C  
120  
DP  
P
250  
D
Tch  
150  
Tstg  
--55 to +150  
°C  
Electrical Characteristics at Ta=25°C  
Ratings  
typ  
Parameter  
Symbol  
Conditions  
Unit  
min  
450  
max  
Drain-to-Source Breakdown Voltage  
Zero-Gate Voltage Drain Current  
Gate-to-Sourse Leakage Current  
Cutoff Voltage  
V
I
=500µA, V =0  
V
µA  
µA  
V
(BR)DSS  
D GS  
I
V
V
V
V
=450V, V =0  
GS  
10  
DSS  
GSS  
DS  
GS  
DS  
DS  
I
=±12V, V =0  
DS  
±10  
V (off)  
GS  
=10V, I =1mA  
1.0  
14  
2.0  
D
Forward Transfer Admittance  
yfs  
=10V, I =15mA  
28  
190  
210  
mS  
Ω
D
R
DS  
(on)1  
I
I
=15mA, V =10V  
GS  
250  
275  
D
Static Drain-to-Sourse On-State Resistance  
R
DS  
(on)2  
=15mA, V =4V  
GS  
Ω
D
Marking : CK  
Continued on next page.  
Any and all SANYO products described or contained herein do not have specifications that can handle  
applications that require extremely high levels of reliability, such as life-support systems, aircraft's  
control systems, or other applications whose failure can be reasonably expected to result in serious  
physical and/or material damage. Consult with your SANYO representative nearest you before using  
any SANYO products described or contained herein in such applications.  
SANYO assumes no responsibility for equipment failures that result from using products at values that  
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other  
parameters) listed in products specifications of any and all SANYO products described or contained  
herein.  
SANYO Electric Co.,Ltd. Sem iconductor Com pany  
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN  
82200 TS IM TA-2985 No.6617-1/4  
1234

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 		暂无描述
2SK2869(S)-(1) HITACHI

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 		Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
2SK2869(S)-(2) HITACHI

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