Datasheet > 2SK2869

2SK2869

更新时间： 2024-11-18 12:53:23

品牌	Logo	应用领域
TYSEMI		驱动器栅极栅极驱动
页数	文件大小	规格书
1页	103K
描述
Low on-resistance RDS = 0.033 typ. 4V gate drive device can be driven from 5V source

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2SK2869 数据手册

Product specification

2SK2869

TO-252

Features

Unit: mm

+0.15

-0.15

+0.1

2.30

-0.1

Low on-resistance

R^DS= 0.033 typ.

6.50

+0.2

5.30

-0.2

+0.8

0.50

-0.7

High speed switching

4V gate drive device can be driven from 5V source

0.127

max

+0.1

0.80

-0.1

+0.1

0.60

-0.1

2.3

4.60

1 Gate

+0.15

-0.15

2 Drain

3 Source

Absolute Maximum Ratings Ta = 25

Parameter

Drain to source voltage

Symbol

V^DSS

V^GSS

I^D

Rating

Unit

Gate to source voltage

Drain current

I^dp*

P^D

Power dissipation

Channel temperature

Storage temperature

* PW 10 s,Duty Cycle 1%

T^ch

150

T^stg

-55 to +150

Electrical Characteristics Ta = 25

Parameter

Symbol

V^DSS

I^DSS

Testconditons

I^D=10mA,V^GS=0

Min

Typ

Max

Unit

Drain to source breakdown voltage

Drain cut-off current

V^DS=60V,V^GS=0

V^GS= 16V,V^DS=0

V^DS=10V,I^D=1mA

V^DS=10V,I^D=10A

VGS=10V,ID=10A

VGS=4V,ID=10A

Gate leakage current

IGSS

Gate to source cutoff voltage

Forward transfer admittance

V^GS(off)

Y^fs

1.5

2.5

0.033 0.045

Drain to source on-state resistance

R^DS(on)

0.055 0.07

740

Input capacitance

Output capacitance

Reverse transfer capacitance

Turn-on delay time

Rise time

C^iss

C^oss

Crss

t^on

t^r

V^DS=20V,V^GS=0,f=1MHZ

380

140

110

I^D=10A,V^GS(on)=10V,R^L=3

Turn-off delay time

Fall time

toff

105

120

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